室温脉冲激光原位沉积技术制备Cu_(2)(Zn_(1-x)Fe_(x))SnS_(4)/Bi_(2)S_(3)异质结及其光电性能  

Photoelectric Performance of Cu_(2)(Zn_(1-x)Fe_(x))SnS_(4)/Bi_(2)S_(3) Heterojunction Prepared by In-situ Pulsed Laser Deposition at Room Temperature

作　　者：贾瑞彬 田静如 沙震宗 夏丰金 马帅 于立岩[1] JIA Ruibin;TIAN Jingru;SHA Zhenzong;XIA Fengjin;MA Shuai;YU Liyan(College of Materials Science and Engineering,Qingdao University of Science and Technology,Qingdao 266061,China;College of Mathematics and Physics,Qingdao University of Science and Technology,Qingdao 266061,China)

机构地区：[1]青岛科技大学材料科学与工程学院,山东青岛266061 [2]青岛科技大学数理学院,山东青岛266061

出　　处：《青岛科技大学学报（自然科学版）》2023年第3期30-37,共8页Journal of Qingdao University of Science and Technology:Natural Science Edition

基　　金：国家自然科学基金青年基金项目(61604086).

摘　　要：采用具有磁性的Fe取代Cu_(2)ZnSnS_(4)(CZTS)中Zn组分,制备Cu_(2)(Zn_(1-x)Fe_(x))SnS_(4)(CZFTS)薄膜。将电子传输层Bi_(2)S_(3)与CZFTS耦合,采用室温脉冲激光沉积技术(RT-PLD)制备了CZFTS/Bi_(2)S_(3)异质结构。研究了Fe掺杂对于CZFTS薄膜形貌、结晶度和吸光度的影响。测试了单层薄膜和异质结构的光电响应特性,实验表明与单层CZFTS薄膜相比,CZFTS/Bi_(2)S_(3)异质结在可见光区域内的光电响应速度至少提高了一个数量级,响应时间缩短至几十ms。Cu_(2)(Zn_(1-x)Fe_(x))SnS_(4)(CZFTS)thin films were prepared by replacing Zn component of Cu_(2)ZnSnS_(4)(CZTS)with magnetic Fe.CZFTS/Bi_(2)S_(3) heterostructure was prepared by room-temperature pulsed laser deposition(RT-PLD)by coupling the electron transport layer Bi_(2)S_(3) with CZFTS.The effects of Fe doping on the morphology,crystallinity and absorbance of CZFTS films were studied.The photoelectrical response properties of the monolayer film and the heterostructure were characterized.The experimental results demonstrated that the photoelectrical response speed of CZFTS/Bi_(2)S_(3) heterojunction in visible light region was at least one-order-of-magnitude higher than that of the monolayer CZFTS film,and the response time constant was reduced to milliseconds.

关 键 词：Cu_(2)ZnSnS_(4)(CZTS) Cu_(2)(Zn_(1-x)Fe_(x))SnS_(4)(CZFTS) CZFTS/Bi_(2)S_(3)异质结 脉冲激光沉积 光电转换 光电探测 

分 类 号：TN36[电子电信—物理电子学]