新型(Sr_(0.5)Ca_(0.5))_(3)Ta(Ga_(0.5)Al_(0.5))_(3)Si_(2)O_(14)高温压电晶体的生长及性能表征  

Growth and Characterization of Novel(Sr_(0.5)Ca_(0.5))_(3)Ta(Ga_(0.5)Al_(0.5))_(3)Si_(2)O_(14) High Temperature Piezoelectric Crystal

作　　者：赵桂媛 刘蕾 尹芳艺 朱孟花 付秀伟[1] ZHAO Guiyuan;LIU Lei;YIN Fangyi;ZHU Menghua;FU Xiuwei(State Key Laboratory of Crystal Materials,Shandong University,Ji'nan 250100,China;State Key Laboratory of Solidification Processing,Northwestern Polytechnical University,Xi'an 710072,China)

机构地区：[1]山东大学晶体材料国家重点实验室,山东济南250100 [2]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《铸造技术》2023年第5期400-404,共5页Foundry Technology

基　　金：山东省自然科学基金(ZR2020QE031);国家自然科学基金(52002218);凝固技术国家重点实验室开放课题(SKLSP202209);国家重点研发计划(2022YFB3605704);山东大学齐鲁青年学者人才项目。

摘　　要：硅酸镓镧系列晶体因具有较高电阻率和优异的压电性能被认为是高温传感器应用的优选材料。本文在国际上首次采用提拉法成功生长了新型(Sr_(0.5)Ca_(0.5))_(3)Ta(Ga_(0.5)Al_(0.5))_(3)Si_(2)O_(14)(SCTGAS)高温压电晶体,并研究了离子取代对晶体生长及电学性能的影响。生长的SCTGAS晶体无色,结晶质量较好,呈现出板面生长形态,在可见光波段具有较高的透过性。在450℃测试温度下,该晶体的电阻率仍高于109Ω·cm。此外,Sr取代能够显著增强晶体的高温压电系数d11,550℃时该值达到5.55 pC/N。因此,SCTGAS晶体在高温压电传感器领域展现出良好的应用潜力。Langasite crystals are considered the preferred materials for high-temperature sensors due to their high resistivity and excellent piezoelectric properties.In this paper,a novel(Sr_(0.5)Ca_(0.5))_(3)Ta(Ga_(0.5)Al_(0.5))_(3)Si_(2)O_(14)(SCTGAS)high temperature piezoelectric crystal was successfully grown by the Czochralski method for the first time.The effects of ion substitution on crystal growth and electrical properties were then studied.The as-grown SCTGAS crystal is colorless with a plate growth morphology,having high transmittance in the visible light band.The crystal shows a high resistivity,with a value over 109Ω·cm at 450℃.In addition,Sr substitution can significantly enhance the piezoelectric coefficient d11,which reaches 5.55 pC/N at 550℃.Therefore,the SCTGAS single crystal is very promising for high-temperature piezoelectric sensors.

关 键 词：硅酸镓镧 高温压电 压电系数 提拉法 晶体生长 

分 类 号：O782[理学—晶体学]