Large-scale plasma grafts voltage stabilizer on hexagonal boron nitride for improving electrical insulation and thermal conductivity of epoxy composite  

作　　者：Penghao Zhang Chenguo Yao Liang Yu Xuetong Zhao Lisheng Zhao Linghan Lan Shoulong Dong 

机构地区：[1]State Key Laboratory of Power Transmission Equipment and System Security and New Technology,School of Electrical Engineering,Chongqing University,Chongqing,China [2]School of Energy and Power Engineering,Chongqing University,Chongqing,China

出　　处：《High Voltage》2023年第3期550-559,共10页高电压（英文）

基　　金：National Natural Science Foundation of China,Grant/Award Number:52277135;Fund of the Key Laboratory of High Power Microwave Technology,Grant/Award Number:6142605190105;Graduate Research and Innovation Foundation of Chongqing,Grant/Award Number:CYB22016。

摘　　要：Better electrical insulation and thermal management are both urgently required in integrated power semiconductors.Electrical insulation epoxy encapsulation suffers from poor heat conduction,which has increasingly become a bottleneck of power semiconductors integration.Although incorporating high thermal conductivity ceramics,such as hexagonal boron nitride(hBN),aluminium nitride etc.into epoxy promotes the thermal conductivity,the eco-friendly scalable fabrication of these composites with sufficient electrical breakdown strength remains a formidable challenge.Suitable voltage stabilizers are known to provide additional benefits to breakdown strength.Herein,a highthroughput approach combining plasma with roll-to-roll was developed.The voltage stabilizer(acetophenone)was grafted on interfaces between hBN and epoxy matrix through plasma.The high-energy electrons are consumed by the grafted interface,which leads to the significant suppression of partial discharge in Epoxy/hBN.Meanwhile,interfacial phonon scattering is repaired by grafting.Therefore,the epoxy composite concurrently exhibits improved breakdown strength(by 27.4%)and thermal conductivity(by 142.9%)at about 11.9 wt.%filler content,outperforming the pure epoxy.Consequently,a promising modification strategy for mass production is provided for the encapsulation materials in various high-power-density semiconductor devices.

关 键 词：composite CONDUCTIVITY INSULATION 

分 类 号：TB33[一般工业技术—材料科学与工程]