Improving thermal stability of LiNbO_(3)based electro-optical electric field sensor by depositing a TiO_(2)film  

作　　者：She Wang Hai Wang Chanxiao Li Chijie Zhuang Rong Zeng 

机构地区：[1]Department of Electrical Engineering,Tsinghua University,Beijing,China [2]Tianfu New Area Power Supply Company,State Grid of Sichuan Electric Power Company,Chengdu,China [3]State Key Lab of Power Systems,Tsinghua University,Beijing,China [4]International Joint Laboratory on Low Carbon Clean Energy Innovation,Tsinghua University,Beijing,China

出　　处：《High Voltage》2022年第5期840-846,共7页高电压（英文）

基　　金：State Grid Corporation of China,Grant/Award Number:52120519000M。

摘　　要：Electro-optic electric field sensors based on LiNbO3 are widely used for the measurement of electric fields or transient voltages.However,the working bias of the sensor is influenced by the temperature due to the thermo-optic effect of LiNbO_(3).An athermal electrooptic electric field sensor was demonstrated by coating a thin layer of TiO_(2)film which has a negative thermo-optic coefficient,on the common-path interferometer based sensor to compensate LiNbO_(3)'s positive thermo-optic coefficient.Both calculation and experimental studies were conducted.The experimental results reasonably agree well with the calculated values,and the results show the sensor coated with a 640 nm thick TiO_(2)film has a much smaller temperature dependence of 0.011°/℃compared to the initial value of 0.1°/℃.

关 键 词：FILM FIELD stability 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]