GaN基Micro-LED量子效率的研究进展  

Recent progress on quantum efficiency of GaN-based Microt-LED

作　　者：李胜德 王梓函 徐京城[1] LI Shengde;WANG Zihan;XU Jingcheng(School of Materials and Chemistry,University of Shanghai for Science and Technology,Shanghai 200093,China)

机构地区：[1]上海理工大学材料与化学学院,上海200093

出　　处：《有色金属材料与工程》2023年第3期73-84,共12页Nonferrous Metal Materials and Engineering

基　　金：上海仪耐新材料科技有限公司横向项目(H-2020-311-007)。

摘　　要：微米级发光二极管(Micro light-emitting diode,Micro-LED)器件具有高亮度、高耐热性、长寿命、低功耗以及极短的响应时间等优点,被视为下一代显示技术的基石,可满足手机、可穿戴手表、AR/VR、微型投影仪、超高亮度显示器等先进设备应用的个性化需求。Micro-LED显示芯片与目前用于高亮度照明的无机半导体芯片具有相似的特性。当管芯直径减小到微米级时,会出现尺寸效应与Droop效应,量子效率急剧下降,器件整体性能受限。介绍了发光二极管的量子效率及影响GaN基Micro-LED量子效率的因素,并提出提升内量子效率和光提取效率的措施,同时对Micro-LED的未来研究与应用进行了总结与展望。Micro light-emitting diode(Micro-LED)devices have the advantages of high brightness,high heat resistance,long life,low power consumption,and extremely short response time,are regarded as the cornerstone of next-generation display technology,and can meet the personalized demands of advanced applications,such as mobile phones,wearable watches,AR/VR,micro-projectors,ultra-high brightness displays,and so on.Micro-LED display chips have similar characteristics to the inorganic semiconductor chips currently used for high brightness lighting.When the tube core core diameter decreases to the micron level,size-effect and Droop-effect appear,the quantum efficiency decreases sharply,and the overall performance of the device is limited.The quantum efficiency of light-emitting diodes and the factors that affect the quantum efficiency of GaN-based Micro-LED were introduced,the measures to improve the internal quantum efficiency and light extraction efficiency were proposed,and the future research and application of Micro-LED were summarized and prospected.

关 键 词：尺寸效应 Droop效应 内量子效率 光提取效率 外量子效率 

分 类 号：O646.542[理学—物理化学]