势垒高度对SB-MOSFET特性的影响研究  

Study on the Influence of Barrier Height on the Characteristics of SB-MOSFET

作　　者：赵春荣 刘溪[1] ZHAO Chunrong;LIU Xi(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870

出　　处：《微处理机》2023年第3期35-38,共4页Microprocessors

摘　　要：在传统场效应晶体管的基础上,针对SB-MOSFET对金属功函数敏感的问题,设计了势垒高度对SB-MOSFET性能影响的实验并加以验证。实验中通过调整金属功函数、金属费米能级与半导体钉扎位置,实现势垒高度的改变。通过器件模拟和电学特性仿真,验证了势垒高度对器件转移特性的影响,并通过能带和电子浓度仿真对实验结论展开分析。实验表明,势垒高度增大,正向导通电流变小,反向泄漏电流不变,在此结论基础上进一步探讨SB-MOSFET避免离子注入等问题,有助于提高界面态质量,为MOSFET研究和大规模器件开发提供了新思路。Based on the traditional field effect transistor,aiming at the problem that SB-MOSFET is sensitive to metal work function,an experiment on the influence of barrier height on the performance of SB-MOSFET is designed and verified.In the experiment,the barrier height can be changed by adjusting the work function of metal,the Fermi level of metal and the pinning position of semiconductor.Through device simulation and electrical characteristics simulation,the influence of barrier height on device transfer characteristics is verified,and the experimental conclusions are analyzed through energy band and electron concentration simulation.The experiment shows that when barrier height increases,the forward conduction current decreases,and the reverse leakage current remains unchanged.Based on the conclusion,further discussion on avoiding ion implantation in SB-MOSFET is made,which is helpful to improve the quality of interface state,and provides a new idea for MOSFET research and large-scale device development.

关 键 词：肖特基场效应晶体管 肖特基势垒高度 金属功函数 

分 类 号：TN386.1[电子电信—物理电子学]