高低肖特基势垒无掺杂隧道场效应晶体管研究  

Study on Undoped Tunnel Field Effect Transistor Based on High and Low Schottky Barriers

作　　者：李萌萌 刘溪[1] LI Mengmeng;LIU Xi(School of Information Science and Engineering,Shenyang University of Technology,Shenyang 110870,China)

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110870

出　　处：《微处理机》2023年第3期39-41,共3页Microprocessors

摘　　要：基于高低肖特基势垒机理提出一种无掺杂的隧道场效应晶体管HLSB-TFET。该器件只需要一个具有独立电源的栅电极且无需掺杂。在源极与中间硅区导带之间形成高肖特基势垒,用来产生隧道效应作为正向导通机制;在漏极与中间硅区导带之间形成低肖特基势垒,用于防止由热离子发射引起的空穴。所提出的HLSB-TFET对空穴具有自然的阻挡效应,不会随着漏极到源极电压的增加而显著降低。经过仿真验证,该器件的亚阈值摆幅较低,反向漏电与静态功耗均较小,体现出较高的应用优势。Based on the mechanism of high and low Schottky barrier,an undoped tunnel field effect transistor,aka HLSB-TFET,is proposed.The device only needs a gate electrode with an independent power supply and does not need doping.A high Schottky barrier is formed between the source and the conduction band in the intermediate silicon region to generate tunneling effect as a forward conduction mechanism.A low Schottky barrier is formed between the drain and the conduction band of the intermediate silicon region to prevent holes caused by thermionic emission.The proposed HLSB-TFET has a natural blocking effect on holes and will not decrease significantly with the increase of drain-source voltage.The simulation results show that the device has low subthreshold swing,low reverse leakage and low static power consumption,which shows high application advantages.

关 键 词：肖特基势垒 双向隧道场效应晶体管 带间隧道 无掺杂器件 

分 类 号：TN386.3[电子电信—物理电子学]