ZnO工艺对主体结构为ZnO/Ag/ZnO的低辐射薄膜膜层电学性能的影响  

Effect of ZnO Process on Electrical Properties of Low-E Films with ZnO/Ag/ZnO Main Structure

作　　者：周枫 ZHOU Feng(Xinyi Glass(Wuhu)Company Limited,Wuhu 241000,China)

机构地区：[1]信义节能玻璃(芜湖)有限公司,芜湖241000

出　　处：《玻璃》2023年第6期39-43,共5页Glass

摘　　要：对低辐射薄膜电学性能的研究可以反应出功能层银的生长质量,而银的生长质量也决定了低辐射薄膜的性能。通过改变主体结构为ZnO/Ag/ZnO的低辐射薄膜中ZnO的氧气含量、工艺气压及厚度,研究其对薄膜的电学性能的影响。结果表明,当氧化锌氧气含量大于76%,工艺气压在0.62 Pa左右,前氧化锌厚度为10 nm,后氧化锌厚度大于等于5 nm时,膜层的电学性质最为优异。The study on the electrical properties of Low-E films can reflect the growth quality of silver in functional layer,and the growth quality of silver also determines the performance of Low-E films.By changing the oxygen content,process pressure and thickness of ZnO in ZnO/Ag/ZnO Low-E films,the effects on the electrical properties of the films were investigated.The results show that when the oxygen content of ZnO is more than 76%,the process pressure is about 0.62 Pa,and the thickness of the pre-ZnO is 10 nm and the thickness of the post-ZnO is 5 nm,the electrical properties of the film are the best.

关 键 词：低辐射镀膜玻璃 银层生长 电学性质 

分 类 号：TQ171[化学工程—玻璃工业]