硅掺杂无氢非晶碳膜的HiPIMS/DCMS共沉积制备及其高温摩擦学性能  

High Temperature Tribological Properties of Hydrogen-Free Si-DLC Films Using HiPIMS/DCMS Co-Deposition Technique

作　　者：李海潮 苏峰华[1] 陈彦军 林松盛 李助军[4] LI Haichao;SU Fenghua;CHEN Yanjun;LIN Songsheng;LI Zhujun(School of Mechanical and Automotive Engineering,South China University of Technology,Guangdong Guangzhou 510640,China;National Engineering Laboratory of Modern Materials Surface Engineering Technology,Institute of New Materials,Guangdong Academy of Sciences,Guangdong Guangzhou 510650,China;Guangdong Provincial Key Laboratory of Modern Surface Engineering Technology,Guangdong Guangzhou 510650,China;School of Mechanical and Electrical Engineering,Guangzhou Railway Polytechnic,Guangdong Guangzhou 510430,China)

机构地区：[1]华南理工大学机械与汽车工程学院,广东广州510640 [2]广东省科学院新材料研究所现代材料表面工程技术国家工程实验室,广东广州510650 [3]广东省现代表面工程技术重点实验室,广东广州510650 [4]广州铁路职业技术学院机械与电子学院,广东广州510430

出　　处：《摩擦学学报》2023年第4期385-396,共12页Tribology

基　　金：国家自然科学基金项目(52175168);173项目(2021-JCJQ-JJ-0175);广东省特支计划团队项目(2019BT02C629);广东省科学院发展专项资金项目(2022GDASYL-2022010103)资助.

摘　　要：采用高功率脉冲磁控溅射(HiPIMS)和直流磁控溅射(DCMS)共沉积技术制备了不同硅原子含量的无氢Si-DLC薄膜,利用高温摩擦试验机对比考察了不同Si原子含量的Si-DLC(硅掺杂类金刚石)薄膜在25~500℃下的摩擦学性能,并通过Raman及XPS等测试方法分析了Si原子含量对薄膜微观结构的影响以及摩擦前后薄膜化学组成和结构变化.探讨了Si-DLC在高温下的摩擦磨损机理.结果表明:Si-DLC薄膜呈现出致密的非晶结构.随着Si原子含量的增加,薄膜中sp3-C的含量增加.掺入的Si形成C-Si-O与C-Si-C键.Si-C键的形成使薄膜的内应力降低,薄膜的膜基结合力增加.摩擦测试表明:室温下,转移膜的形成有助于降低Si-DLC薄膜的摩擦系数.高温下,Si-C键增加了薄膜的高温稳定性,摩擦区域部分Si-C键氧化为Si-O-C键,使薄膜的摩擦系数与磨损率同时降低.Silicon doped hydrogen-free diamond-like carbon(Si-DLC)films were prepared using a superimposed high-power impulse magnetron sputtering(HiPIMS)and direct current magnetron sputtering(DCMS)deposition system with anode layer ion source assistance.The composition,microstructure,and tribological properties of Si-DLC films doped with different Si content at elevated temperature(25~500℃)were systematically investigated.Raman and XPS were used to analyze the influence of Si doping amount on microstructure,chemical composition and tribological properties of the films before and after high temperature friction.The results showed that Si-DLC film displayed a typical amorphous structure.The proportion of sp3-C/sp2-C in the films gradually increased with the increase of Si dopant.Si atoms in Si-DLC films mainly combined with C and O atoms to form C-Si-C and C-Si-O bonds.The formation of Si-C bonds contributed to the reduction of the internal stress and the improvement of the film-substrate adhesion.At room temperature,Si-DLC coating had a low friction coefficient due to the formation of transfer film.At high temperature,the formation of Si-C bonds was propitious to improve the high temperature stability of Si-DLC film.In addition,the partial oxidation of Si-C bonds to Si-O-C bonds in the friction region enables the film to had both low friction and low wear at high temperature.

关 键 词：Si-DLC薄膜 高功率脉冲磁控溅射 高温 摩擦学性能 摩擦机理 

分 类 号：TH117.1[机械工程—机械设计及理论] TH145[一般工业技术—材料科学与工程]