High Energy X-Ray Dosimetry Using(ZnO)_(0.2)(TeO_(2))_(0.8)Thin Film-based Real-time X-Ray Sensor  

作　　者：M.M.Idris I.O.Olarinoye M.T.Kolo S.O.Ibrahim J.K.Audu 

机构地区：[1]Department of Physics,Federal University of Technology,P.M.B 65,Minna,Nigeria [2]Department of Physics,Nasarawa State University,P.M.B 1022,Keffi,Nigeria [3]Department of Physics,University Putra,43400,Malaysia [4]Department of Medical Physics and Radiotherapy,National Hospital,P.M.B 425,Abuja,Nigeria

出　　处：《Non-Metallic Material Science》2023年第1期4-13,共10页非金属材料科学（英文）

摘　　要：This study reports the dosimetric response of a(ZnO)_(0.2)(TeO_(2))_(0.8)thin film sensor irradiated with high-energy X-ray radiation at various doses.The spray pyrolysis method was used for the film deposition on soda-lime glass substrate using zinc acetate dehydrate and tellurium dioxide powder as the starting precursors.The structural and morphological properties of the film were determined.The I-V characteristics measurements were performed during irradiation with a 6 MV X-ray beam from a Linac.The results revealed that the XRD pattern of the AS-deposited thin film is non-crystalline(amorphous)in nature.The FESEM image shows the non-uniform shape of nanoparticles agglomerated separately,and the EDX spectrum shows the presence of Te,Zn,and O in the film.The I-V characteristics measurements indicate that the current density increases linearly with X-ray doses(0-250 cGy)for all applied voltages(1-6 V).The sensitivity of the thin film sensor has been found to be in the range of 0.37-0.94 mA/cm^(2)/Gy.The current-voltage measurement test for fading normalised in percentage to day 0 was found in the order of day 0>day 15>day 30>day 1>day 2.These results are expected to be beneficial for fabricating cheap and practical X-ray sensors.

关 键 词：Thin film X-ray radiation I-V characteristics DOSIMETRY 

分 类 号：TG1[金属学及工艺—金属学]