一种用于负压LDO芯片的过温保护电路  

An Over-Temperature Protection Circuit for Negative-Voltage Monolithic Low-Dropout Regulator

作　　者：苟超 刘一锴 保兴润[1] 赵镱翔 GOU Chao;LIU Yi-kai;BAO Xing-run;ZHAO Yi-xiang(Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp.,Chongqing 400060)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《环境技术》2023年第5期108-112,共5页Environmental Technology

基　　金：重庆市自然科学基金,项目编号:CSTC2021JCYJ-MSXMX1197。

摘　　要：本文介绍了一种用于负压LDO芯片的过温保护电路。该电路利用负压带隙基准电压的零温漂特性与三极管基极-发射极电压差的负温漂特性来产生过温控制信号。同时将该过温保护电路集成到一款负压LDO芯片中。负压LDO芯片基于4μm双极工艺流片,测试结果表明:LDO芯片的过温保护点在(165~170)℃,过温恢复点在(95~100)℃,与设计值基本吻合。This paper presents an over-temperature protection circuit for negative-voltage monolithic low-dropout regulator(LDO).This circuit generates an over-temperature control signal through the use of negative bandgap reference voltage with zero-temperature coefficient and triode′s base-emitter voltage with negative-temperature coefficient,and has been integrated into a negative-voltage monolithic LDO chip which has been implemented in a 4μm bipolar process.The testing results show that the overtemperature protection point is around(165~170)℃and the over-temperature recovery point is around(95~100)℃,which are basically consistent with the design values.

关 键 词：负压LDO芯片 过温保护电路 双极工艺 

分 类 号：TN431[电子电信—微电子学与固体电子学]