低反射MXene基电磁屏蔽材料的研究进展  

Research Progress of MXene-Based Electromagnetic Interference Shielding Materials with Low Reflectivity

作　　者：刘学斌 林志强 万艳君 胡友根[1] 孙蓉[1] LIU Xuebin;LIN Zhiqiang;WAN Yanjun;HU Yougen;SUN Rong(Shenzhen Institute of Advanced Electronic Materials,Shenzhen Institute of Advanced Technology,Chinese Acad-emy of Sciences,Shenzhen 518055,China)

机构地区：[1]深圳先进电子材料国际创新研究院,中国科学院深圳先进技术研究院,广东深圳518055

出　　处：《材料研究与应用》2023年第3期412-426,I0002,共16页Materials Research and Application

基　　金：国家自然科学基金项目(62074154,62101352);广东省基础和应用基础研究基金项目(2022A1515140158,2020A1515110154);深圳市科技计划项目(RCBS20210706092343016,JCYJ20210324102208023,JSGG20210802153000002)。

摘　　要：随着通信技术和移动电子设备的不断发展,电磁干扰问题变得日益严重,因此开发高性能的电磁屏蔽材料成为了重要的研究方向。二维过渡金属碳(氮)化物(MXenes)因具有导电性高、介电常数大等优点而被广泛应用于电磁屏蔽的研究。然而,高导电性表面会导致电磁波的反射,从而造成严重的电磁波二次污染,因此研究开发低反射的MXene基电磁屏蔽材料变得非常重要。对MXene的结构特点和制备方法进行了总结,详细阐述了低反射的Ti_(3)C_(2)T_(x)薄膜和气凝胶电磁屏蔽材料的研究进展,展望了MXene基电磁屏蔽材料的未来研究方向和发展趋势。The development of communication technology and mobile electronic devices has resulted in increasingly severe electromagnetic interference(EMI)problems,highlighting the need for high-performance EMI shielding materials.Two-dimensional transition metal carbides or nitrides(MXenes)are widely used as EMI shielding materials due to their high electrical conductivity and large dielectric constant.However,the high-conductivity of MXenes can lead to strong reflection of incident electromagnetic waves,causing serious secondary pollution.Therefore,developing MXene-based EMI shielding materials with low reflectivity is of utmost importance.In this review,we summarize the structural characteristics and preparation methods of MXene.We also detail the research progress made with Ti_(3)C_(2)T_(x) film and aerogel EMI shielding materials with low reflectivity.Lastly,prospects for the development of MXene-based EMI shielding materials are discussed.

关 键 词：电磁屏蔽 MXene Ti_(3)C_(2)T_(x) 低反射 

分 类 号：TB33[一般工业技术—材料科学与工程]