Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications  

作　　者：Zhongxin LIANG Yang ZHAO Kaifeng WANG Jieyin ZHANG Jianjun ZHANG Ming LI Ru HUANG Qianqian HUANG 

机构地区：[1]Key Laboratory of Microelectronics Devices and Circuits(MOE),School of Integrated Circuits,Peking University,Beijing,100871,China [2]Beijing Advanced Innovation Center for Integrated Circuits,Beijing,100871,China [3]Key Laboratory of Nanophysics and Devices,Institute of Physics,Chinese Academy of Sciences,Beijing,100190,China

出　　处：《Science China(Information Sciences)》2023年第6期309-310,共2页中国科学（信息科学）（英文版）

基　　金：supported by National Key R&D Program of China (Grant No.2018YFB2202801);National Natural Science Foundation of China (Grant Nos.61927901,61822401,61851401);Beijing Nova Program of Science and Technology (Grant No.Z191100001119101);111 Project (Grant No.B18001)。

摘　　要：Silicon-based tunneling field effect transistor(TFET)with a band-to-band tunneling mechanism has been widely studied due to its ultra-steep subthreshold swing(SS),ultralow leakage current(Ioff),and good complementary metaloxide-semiconductor process compatibility[1].

关 键 词：power TUNNELING COMPLEMENTARY 

分 类 号：TN386[电子电信—物理电子学]