Research Towards Terahertz Power Amplifiers in Silicon-Based Process  

作　　者：CHEN Jixin ZHOU Peigen YU Jiayang LI Zekun LI Huanbo PENG Lin 

机构地区：[1]Southeast University,Nanjing 211189,China [2]ZTE Corporation,Shenzhen 518057,China

出　　处：《ZTE Communications》2023年第2期88-94,共7页中兴通讯技术（英文版）

基　　金：supported in part by the National Natural Science Foundation of China under Grant Nos.62101117 and 62188102;in part by ZTE Industry-University-Institute Cooperation Funds;in part by the Project funded by China Postdoctoral Science Foundation under Grant Nos.2021M700763 and 2022T150113.

摘　　要：In view of the existing design challenges for Terahertz(THz)power amplifiers(PAs),the common design methods and the efforts of the State Key Laboratory of Millimeter Wave,Southeast University,China in the development of silicon-based THz PAs,mainly including silicon-based PAs with operating frequencies covering 100–300 GHz,are summarized in this paper.Particularly,we design an LC-balun-based two-stage differential cascode PA with a center frequency of 150 GHz and an output power of 14 dBm.Based on a Marchand balun,we report a 220 GHz three-stage differential cascode PA with a saturated output power of 9.5 dBm.To further increase the output power of THz PA,based on a four-way differential power combining technique,we report a 211–263 GHz dual-LC-tank-based broadband PA with a recorded 14.7 dBm Psat and 16.4 dB peak gain.All the above circuits are designed in a standard 130 nm silicon germanium(SiGe)BiCMOS process.

关 键 词：power amplifier power combining SIGE SILICON-BASED TERAHERTZ 

分 类 号：O441.4[理学—电磁学] TN722.75[理学—物理]