Self-Oscillated Growth Formation of Standing Ultrathin Nanosheets out of Uniform Ge/Si Superlattice Nanowires  

作　　者：甘鑫 安钧洋 王军转 刘宗光 徐骏 施毅 陈坤基 余林蔚 Xin Gan;Junyang An;Junzhuan Wang;Zongguang Liu;Jun Xu;Yi Shi;Kunji Chen;Linwei Yu(School of Electronic Science and Engineering/National Laboratory of Solid-State Microstructures,Nanjing University,Nanjing 210093,China)

机构地区：[1]School of Electronic Science and Engineering/National Laboratory of Solid-State Microstructures,Nanjing University,Nanjing 210093,China

出　　处：《Chinese Physics Letters》2023年第6期27-32,共6页中国物理快报（英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.92164201,61921005,61974064,61934004,and 11874198)。

摘　　要：Self-oscillation is an intriguing and omnipresent phenomenon that governs a broad range of growth dynamics and formation of nanoscale periodic and delicate heterostructures.A self-oscillating growth phenomenon of catalyst droplets,consuming surface-coating a-Si/a-Ge bilayer,is exploited to accomplish a high-frequency alternating growth of ultrathin crystalline Si and Ge(c-Si/c-Ge)nano-slates,with Ge-rich layer thickness of 14–19 nm,embedded within a superlattice nanowire structure,with pre-known position and uniform channel diameter.A subsequent selective etching of the Ge-rich segments leaves a chain of ultrafine standing c-Si nanosheets down to~6 nm thick,without the use of any expensive high-resolution lithography and growth modulation control.A ternary-phase-competition model has been established to explain the underlying formation mechanism of this nanoscale self-oscillating growth dynamics.It is also suggested that these ultrathin nanosheets could help to produce ultrathin fin-channels for advanced electronics,or provide size-specified trapping sites to capture and position hetero nanoparticle for high-precision labelling or light emission.

关 键 词：OSCILLATING consuming sheets 

分 类 号：TB383.1[一般工业技术—材料科学与工程]