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作 者:张渲琳 陆赟豪 陈岚 Xuanlin Zhang;Yunhao Lu;Lan Chen(State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China;School of Physics,Zhejiang University,Hangzhou 310027,China;Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;School of Physics,University of Chinese Academy of Sciences,Beijing 100049,China)
机构地区:[1]State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University,Hangzhou 310027,China [2]School of Physics,Zhejiang University,Hangzhou 310027,China [3]Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [4]School of Physics,University of Chinese Academy of Sciences,Beijing 100049,China
出 处:《Chinese Physics Letters》2023年第6期84-85,共2页中国物理快报(英文版)
摘 要:Ferroelectric materials are typically made up of various elements.By introducing atomic displacements,[1]such as octahedral tilts/rotations[2,3]or interlayer sliding,[4–7]the positive and negative charge centers can be separated,resulting in spontaneous polarization.Due to their homogeneity,it is difficult to achieve ferroelectricity in elemental materials where opposite charge centers must be generated.
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