溅射电压对高功率脉冲磁控溅射Cu箔微观结构及性能的影响  

Effect of Sputtering Voltage on Microstructure and Properties of Cu Foils Deposited by High Power Impulse Magnetron Sputtering

作　　者：余康元 何玉丹[1] 杨波[1] 罗江山[1] YU Kang-yuan;HE Yu-dan;YANG Bo;LUO Jiang-shan(Laser Fusion Research Center,China Academy of Engineering Physics,Mianyang 621900,China)

机构地区：[1]中国工程物理研究院激光聚变研究中心,四川绵阳621900

出　　处：《真空》2023年第3期1-4,共4页Vacuum

基　　金：国家自然科学基金(12104425)。

摘　　要：采用高功率脉冲磁控溅射(HiPIMS)工艺制备出铜(Cu)箔,研究了溅射电压对Cu箔微观结构和性能的影响。结果表明:在溅射电压700~950V范围内,Cu箔均呈现出明显的(111)晶面择优取向,其晶粒尺寸在27.7~36.5nm之间,相对密度在96.1%~98.5%之间,明显优于普通直流磁控溅射制备的Cu箔;随着溅射电压的增大,Cu箔由韧性逐渐向脆性转变,其电阻率逐渐降低至2.38μΩ·cm,接近纯Cu的本体电阻率。Copper(Cu)foils were deposited by high power impulse magnetron sputtering(HiPIMS)method.The effects of sputtering voltage on the microstructure and properties of the Cu foils were investigated.The results show that the Cu foils deposited with the sputtering voltages of 700-950V present(111)crystal preferred orientation obviously,their grain sizes are between 27.7nm and 36.5nm,and the relative densities are between 96.1%and 98.5%,which is distinctly superior to that of the Cu foils prepared by ordinary DC magnetron sputtering.With the increase of sputtering voltage,the Cu foil gradually changes from ductility to brittleness,and the resistivity gradually decreases to 2.38μΩ·cm,which is close to the solid-state resistivity of pure Cu.

关 键 词：高功率脉冲磁控溅射 Cu箔 微观织构 相对密度 电阻率 

分 类 号：TB742[一般工业技术—材料科学与工程] O484[一般工业技术—真空技术]