Cr应力缓释层对柔性Cu_(2)ZnSn(S,Se)_(4)薄膜太阳电池性能的影响  

Effect of Cr Stress Relief Layer on Performance of Flexible Cu_(2)ZnSn(S,Se)_(4) Thin Film Solar Cells

作　　者：陈春阳 唐正霞[1] 孙孪鸿 王威 赵毅杰 Chen Chunyang;Tang Zhengxia;Sun Luanhong;Wang Wei;Zhao Yijie(School of Materials Engineering,Jinling Institute of Technology,Nanjing 211169,China)

机构地区：[1]金陵科技学院材料工程学院,南京211169

出　　处：《半导体技术》2023年第6期482-487,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(51904128);中国博士后科学基金资助项目(2022M722339,2021M702416);江苏省高等学校自然科学研究面上项目(21KJB430020);江苏省大学生创新训练项目(202213573107Y)。

摘　　要：柔性Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)薄膜太阳电池中的应力是阻碍其发展的一大瓶颈。采用磁控溅射法在柔性Ti衬底和Mo背电极之间引入不同厚度的Cr缓释层,研究其对CZTSSe薄膜应力的影响。结果表明,当Cr应力缓释层厚度为80 nm时,薄膜的结晶质量最好,电池具有最佳的光电性能,相比没有Cr应力缓释层存在的情况,薄膜的残余应力从-7.15 GPa降低至-3.61 GPa,电池的光电转换效率(PCE)从2.89%提高至4.65%,增加了60.9%。Cr应力缓释层的引入不会影响CZTSSe薄膜的晶体结构,相反可有效提高薄膜的结晶质量,降低薄膜的残余应力,最终提高电池的光电性能。The stress in flexible Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)thin film solar cells is a major bottle⁃neck hindering their development.The magnetron sputtering method was used to introduce Cr relief layers of different thicknesses between the flexible Ti substrate and the Mo back electrode to study their effect on CZTSSe thin film stress.The results show that when the thickness of the Cr stress relief layer is 80 nm,the crystallization quality of the thin film is the best,and the cell has the best photoelectric performance.Compared with the thin film without the Cr stress relief layer,the residual stress of the thin film is reduced from-7.15 GPa to-3.61 GPa,and the photoelectric conversion efficiency(PCE)of the cell is increased from 2.89%to 4.65%,an increase of 60.9%.The introduction of Cr stress relief layer will not affect the crystal structure of CZTSSe thin film,but can effectively improve the crystallization quality of the thin film,reduce the residual stress of the thin film,and finally improve the photoelectric performance of the cell.

关 键 词：柔性Cu_(2)ZnSn(S Se)_(4)(CZTSSe)薄膜太阳电池 Cr应力缓释层 残余应力 光电转换效率(PCE) 结晶质量 

分 类 号：TM914.42[电气工程—电力电子与电力传动]