一种宽带CMOS低噪声放大器  

A Wideband CMOS Low Noise Amplifier

作　　者：黄未霖 蔡孟冶 姜岩峰 Huang Weilin;Cai Mengye;Jiang Yanfeng(Advanced Technology Research Institute,Department of Electronic Engineering,College of IOT Engineering,Jiangnan University,Wuxi 214122,China)

机构地区：[1]江南大学物联网工程学院电子工程系先进技术研究院,江苏无锡214122

出　　处：《半导体技术》2023年第6期493-499,共7页Semiconductor Technology

基　　金：江苏省自然科学基金资助项目(BK20210453)。

摘　　要：基于130 nm CMOS工艺设计了一款宽带低噪声放大器(LNA),适用于Ka波段的5G应用。通过降低输入阻抗与最佳源阻抗的偏差以抑制噪声,该LNA实现了宽带的最佳噪声系数匹配。一方面,该LNA采用由LC串联组合和LC并联组合构成的宽带前端网络,在取得低噪声系数的同时,实现了宽带输入匹配;另一方面,通过体隔离技术和级间电感匹配技术提高了电路增益。同时,通过并联峰值负载技术,提高了LNA的带内增益平坦度。测试结果表明,该LNA的峰值增益为11.2 dB,-3 dB带宽为7.5 GHz(29.1~36.6 GHz)。噪声系数为5.9~6.6 dB,与仿真的最小噪声系数非常接近。输入反射系数(<-10 dB)带宽为6.7 GHz(28.3~35 GHz)。该LNA在1.2 V电源电压下功耗为9 mW,芯片面积为0.54 mm2。Based on 130 nm CMOS process,a wideband low noise amplifier(LNA)was designed for Ka⁃band 5G applications.By alleviating the deviation of the input impedance from optimum source impedance to realize noise suppression,the LNA achieved optimal noise coefficient matching over wide⁃band.On the one hand,the LNA adopted a wideband front⁃end network composed of LC series combina⁃tion and LC parallel combination,which achieved wideband input matching while achieving low noise figure.On the other hand,the gain of the circuit was improved by the bulk isolation technique and inter⁃stage inductor matching technique.Meanwhile,the in⁃band gain flatness of the LNA was improved by the shunt⁃peaking load technique.The test results show that the peak gain of the LNA is 11.2 dB,the-3 dB bandwidth is 7.5 GHz(29.1-36.6 GHz).The noise figure ranges from 5.9 dB to 6.6 dB,which is very close to the simulated minimum noise figure.The input reflection coefficient(<-10 dB)bandwidth is 6.7 GHz(28.3-35 GHz).The LNA consumes 9 mW at 1.2 V power supply and the chip area is 0.54 mm 2.

关 键 词：宽带输入匹配 低噪声放大器(LNA) KA波段 噪声抑制 输入反射系数带宽 

分 类 号：TN722.3[电子电信—电路与系统] TN432