烧结温度对SnO_(2)压敏电阻电气性能的影响  

Effect of Sintering Temperature on Electrical Properties of SnO_(2)Varistor

作　　者：孙冠岳 赵洪峰[1] 周远翔[2] 谢清云 SUN Guanyue;ZHAO Hongfeng;ZHOU Yuanxiang;XIE Qingyun(The Wind Solar Storage Division of State Key Laboratory of Control and Simulation of Power System and Generation Equipment,School of Electrical Engineering,Xinjiang University,Urumqi 830046,China;State Key Laboratory of Power System and Power Generation Equipment Control and Simulation,Department of Electrical Engineering and Applied Electronics Technology,Tsinghua University,Beijing 100084,China;Xi'an XD Arrester Co.,Ltd.,Xi'an 710200,China)

机构地区：[1]新疆大学电气工程学院电力系统及大型发电设备安全控制和仿真国家重点实验室风光储分室,乌鲁木齐830046 [2]清华大学电机工程与应用电子技术系电力系统及发电设备控制和仿真国家重点实验室,北京100084 [3]西安西电避雷器有限公司,西安710200

出　　处：《电瓷避雷器》2023年第3期141-145,共5页Insulators and Surge Arresters

基　　金：国家自然科学基金资助项目(编号:51762038)。

摘　　要：文章研究了烧结温度对SnO_(2)压敏电阻微观结构和电学性能的影响。通过XRD和SEM观察到烧结温度对样品致密化和晶粒尺寸具有很大影响。通过C-V曲线、E-J曲线及复阻抗图谱计算各电学参数。当烧结温度为1250℃时,样品的电压梯度为762.27 V/mm,非线性系数为36.59,泄漏电流为3.27μA/cm^(2)。在烧结过程中,形成的氧空位和深层缺陷提高了界面态密度,进一步提高了势垒高度。晶界势垒的提高会提高非线性系数,减小泄漏电流。The author studies the effect of sintering temperature on microstructure and electrical properties of SnO_(2)varistor.It was observed by XRD and SEM that the sintering temperature had a great influence on the densification and grain size of the sample.Calculate each electrical parameter by C-V curve,E-J curve and complex impedance map.When the sintering temperature was 1250℃,the voltage gradient was 762.27 V/mm,the nonlinear coefficient was 36.59,and the leakage current was 3.27μA/cm^(2).During the sintering process,the formed oxygen space and deep defects increase the interface density,further improve the height of the barrier.The improvement of the grain boundary barrier will increase the nonlinear coefficient and reduce the leakage current.

关 键 词：SnO_(2) 压敏电阻 电学性能 微观结构 烧结温度 

分 类 号：TM54[电气工程—电器] TQ174.75[化学工程—陶瓷工业]