Back contact interfacial modification mechanism in highly-efficient antimony selenide thin-film solar cells  

作　　者：Junhui Lin Guojie Chen Nafees Ahmad Muhammad Ishaq Shuo Chen Zhenghua Su Ping Fan Xianghua Zhang Yi Zhang Guangxing Liang 

机构地区：[1]Shenzhen Key Laboratory of Advanced Thin Films and Applications,Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,Guangdong,China [2]Institute of Fundamental and Frontier Science,University of Electronic Science and Technology of China,Chengdu 610054,Sichuan,China [3]Univ Rennes,CNRS,ISCR(Institut des Sciences Chimiques de Rennes)UMR 6226,Rennes F-35000,France [4]Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Film Devices and Technology,Nankai University,Tianjin 300350,China

出　　处：《Journal of Energy Chemistry》2023年第5期256-264,I0007,共10页能源化学（英文版）

基　　金：supported by the National Natural Science Foundation of China(62074102);the Guangdong Basic and Applied Basic Research Foundation(2022A1515010979);the Key Project of Department of Education of Guangdong Province(2018KZDXM059);the Science and Technology plan project of Shenzhen(20220808165025003)。

摘　　要：Antimony selenide(Sb_(2)Se_(3))is a potential photovoltaic(PV)material for next-generation solar cells and has achieved great development in the last several years.The properties of Sb_(2)Se_(3)absorber and back contact influence the PV performances of Sb_(2)Se_(3)solar cells.Hence,optimization of back contact characteristics and absorber orientation are crucial steps in raising the power conversion efficiency(PCE)of Sb_(2)Se_(3)solar cells.In this work,MoO2was introduced as an intermediate layer(IL)in Sb_(2)Se_(3)solar cells,and comparative investigations were conducted.The growth of(211)-oriented Sb_(2)Se_(3)with large grains was facilitated by introducing the MoO2IL with suitable thickness.The MoO2IL substantially lowered the back contact barrier and prevented the formation of voids at the back contact,which reduced the thickness of the MoSe2interface layer,inhibited carrier recombination,and minimized bulk and interfacial defects in devices.Subsequently,significant optimization enhanced the open-circuit voltage(VOC)of solar cells from 0.481 V to 0.487 V,short-circuit current density(JSC)from 23.81 m A/cm^(2)to 29.29 m A/cm^(2),and fill factor from 50.28%to 57.10%,which boosted the PCE from 5.75%to 8.14%.

关 键 词：Sb_(2)Se_(3)solar cells MoO_(2)intermediate layer Back contact DEFECTS 

分 类 号：TM914.42[电气工程—电力电子与电力传动] TQ135.31[化学工程—无机化工]