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作 者:Qixian Zhang Yi Guo Huicong Liu Weiping Li Liqun Zhu Haining Chen
机构地区:[1]School of Materials Science and Engineering,Beihang University,Beijing,100191,China
出 处:《Journal of Renewable Materials》2023年第8期3193-3201,共9页可再生材料杂志(英文)
基 金:National Natural Science Foundation of China,Grant No.21875013,H.N.Chen;Beijing Natural Science Foundation,Grant No.2182031,H.N.Chen.
摘 要:All-inorganic CsPbI_(3) perovskite has attracted wide attention due to its desirable optical bandgap(Eg:∼1.7 eV)as well as high chemical stability.Nevertheless,the photovoltaic performance of CsPbI_(3) perovskite solar cells(PSCs)was limited by severe nonradiative charge recombination due to high defect density at the grain boundary and surface of perovskitefilms.To address this issue,a pyrrolidinium iodide(PyI)molecule was introduced to modify the surface and grain boundary of CsPbI_(3) perovskitefilms to passivate defects,which improves the quality of CsPbI_(3) perovskitefilms as well as induces the generation of a quasi-2D Py_(2)CsPb_(2)I_(7) capping layer between per-ovskite layer and hole transport layer.Such quasi-2D Py_(2)CsPb_(2)I_(7) capping layer optimizes interface contact between CsPbI_(3) perovskite layer and hole transport layer and blocks the electron transfer from CsPbI_(3) perovskite photoactive layer to the hole transport layer.As a result,the performance of CsPbI_(3) PSCs is well improved to 17.87%for power conversion efficiency(PCE)with an ultra-high fill factor(FF)of 0.84.In addition,the PyI mole-cule modified CsPbI_(3) perovskite devices exhibit excellent stability,which remains its initial PCE almost unchanged after aging for 35 days under the dry air atmosphere(temperature:20℃–30℃,control relative humid-ity(RH):<10%).
关 键 词:CsPbI_(3) INORGANIC PEROVSKITE defect passivation pyrrolidinium iodide
分 类 号:TM914.4[电气工程—电力电子与电力传动]
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