Cu_(2)Se热电忆阻器模拟计算与性能表征  

Simulation Calculation and Performance Analysis of Cu_(2)Se Thermoelectric Memristor

作　　者：史燃 张翔宇 南波航 徐桂英[1] SHI Ran;ZHANG Xiangyu;NAN Bohang;XU Guiying(School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China)

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《材料导报》2023年第13期19-25,共7页Materials Reports

基　　金：国家重点研发计划(2017YFF0204706);中央高校基本科研业务费专项资金(FRF-MP-18-005,FRF-MP-19-005);颠覆性创新资助项目(19-163-13-ZT-001-008-19)。

摘　　要：忆阻器是一种可以通过改变电阻来储存信息或者进行计算的电路元件。但脉冲电路脉宽达到纳秒级较为困难,这限制了忆阻器改变电阻的速度。而脉冲激光器的脉宽很短,很容易达到纳秒级。Cu_(2)Se是典型的在梯度温场作用下空穴和Cu+同时参与定向迁移的热电材料,在无梯度温场时Cu^(+)迁移不可逆,并且热场或梯度温场是比电场、激光、氧化还原反应等所需能量低的能量转换形式,因此Cu_(2)Se有可能成为一种消耗能量更低的可用温差驱动的热电忆阻器材料。本工作模拟建立了用脉冲激光器照射Cu_(2)Se样品后在不同时刻厚度方向上的温度分布模型,根据其热电性能计算了不同位置的温差电势与电场强度,同时制备了Cu_(2)Se热电忆阻器并测定了其电学性质。实验结果表明,厚度为70μm、测试探针间距为1 mm的Cu_(2)Se样品从高阻态转变为低阻态时需要的重置电压为0.47 V,从低阻态转变为高阻态时需要的重置电压为0.40 V,其重置电场强度小于0.5 V/mm,证明了Cu_(2)Se热电材料不需要一个初始高电压来激发其忆阻器效应,给出了热电忆阻器的工作原理。计算结果,表明经脉冲激光作用后Cu_(2)Se样品在厚度方向上的电场强度(50~0.56 V/mm)均大于电阻转变所需要的电场强度(0.5 V/mm),在理论上证明了用激光照射Cu_(2)Se热电材料制作热电忆阻器件的可行性。A memristor is a circuit element that can store information or perform calculations by changing its resistance.However,a pulse circuit with a pulse width of up to nanosecond is a difficult task,and limits the speed at which the memristor can change resistance.The pulse width of a pulsed laser is very short and can easily reach the nanosecond level.Cu_(2)Se is a typical thermoelectric material with both hole and Cu+as carriers under the graded temperature field.The movement of Cu+is irreversible without graded temperature field.Besides,the energy consumption for establishing thermal or graded temperature field(10000℃=1 eV)is much less than that for electric field,laser,oxidation-reduction reactions,etc.Therefore Cu_(2)Se might be a kind of thermoelectric memristor material.In this work,the memristor electrical properties of Cu_(2)Se samples were measured,and the temperature distribution models of Cu_(2)Se samples at different times in the thickness direction were simulated.The thermoelectric potential and electric field intensity at different positions were calculated according to the thermoelectric property of Cu_(2)Se.As the result,the electric field intensities of Cu_(2)Se samples at different positions along the thickness direction after pulsed laser were obtained.The experimental results show that the direct voltage and inverse voltage of 70μm thick Cu_(2)Se samples with 1 mm probe spacing are 0.47 V and 0.40 V,respectively,Cu_(2)Se thermoelectric materials do not need an initial high voltage to stimulate the memristor effect.Also,the mechanism of Cu_(2)Se ther-moelectric memristor has been proposed.The calculation results indicate that the electric field intensities(50—0.56 V/mm)along the thickness direction is greater than the electric field intensities required for resistance transformation(0.5 V/mm).Therefore,the feasibility of laser irradiation Cu_(2)Se thermoelectric memristor devices is proved theoretically.

关 键 词：热电材料 忆阻器 硒化亚铜 忆阻器效应 热电忆阻器 

分 类 号：TN604[电子电信—电路与系统]