S频段500 W高稳相固态功放设计  

Design of an S-band 500 W high phase-stable solid-state power amplifier

作　　者：李成虎[1] Li Chenghu(Southwest China Institute of Electronic Technology,Chengdu 610036,China)

机构地区：[1]中国西南电子技术研究所,四川成都610036

出　　处：《电子技术应用》2023年第7期7-10,共4页Application of Electronic Technique

摘　　要：介绍了一种S频段500 W高稳相固态功放的工程实现。根据实际工程需求,采用4片功率芯片进行大功率合成,在2025 MHz~2120 MHz频率范围内实现输出功率大于600 W的固态功率放大器。采用了低附加相移电路设计、微波板材模块化设计、功率回退等措施,实现了在0℃~30℃的环境温度条件下,输出功率在1 W~500 W功率范围内,功放输出端相位变化小于11.5°,满足了厘米级扩频测控系统对S频段固态功放的工程技术要求。This paper introduces an engineering realization of an S-band 500 W high phase-stable solid-state power amplifier.According to the engineering requirement,four power chips are used for high powersynthesis,and the solid-state power amplifier with output power>600 W is realized in the frequency range of 2025 MHz~2120 MHz.Under the environment temperature condition of 0℃~30℃,the phase change of 1 W~500 W output power is<11.5°by the low additional phase shift design,modular design of diffirent microwave plate units,power back-off and other measures,which achieved the engineering and technical requirement of the centimeter-level TT&C for S-band solid state power amplifier.

关 键 词：S频段 固态功放 高稳相 低附加相移 

分 类 号：TN722.7[电子电信—电路与系统]