W频段波导气密结构的功率合成放大器设计  

A novel power amplifier based on airtight waveguide for W band power combination

作　　者：马战刚[1] 冯思润 余小辉[1] Ma Zhangang;Feng Sirun;Yu Xiaohui(China Electronics Technology Group Corporation 13th Research Institute,Shijiazhuang 050000,China)

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050000

出　　处：《电子技术应用》2023年第7期11-15,共5页Application of Electronic Technique

摘　　要：针对3 mm频段功率合成的需要,设计了一种波导气密结构的4合1放大器,用来实现W频段瓦级的气密功率合成输出。本设计引入硅基结构实现了W频段组件的气密,解决了传统3 mm频段波导组件难以气密的难题。本设计基于波导合路原理,运用高频结构仿真软件对气密波导合路结构进行了建模与仿真。通过对比模型的仿真结果与样机实测数据,表明该W频段波导气密功率合成放大器的指标可满足设计要求。This paper proposed a novel 4 in 1 high power airtight amplifier which worked at watt level for 3 mm band power combination use.This design introduced a silicon based structure to achieve airtightness for W-band components,solving the problem of traditional 3 mm band waveguide components being difficult to be airtight.It was designed by using the airtight waveguide structure.The software was also used for simulating the waveguide combiner.Finally,the power amplifier was carefully fabricated and tested.Results show that the final indicators meet design requirements.

关 键 词：气密波导 功率合成器 电磁场 

分 类 号：TN73[电子电信—电路与系统]