Electric-field control of perpendicular magnetic anisotropy by resistive switching via electrochemical metallization  

作　　者：袁源 魏陆军 卢羽 刘若柏 刘天宇 陈家瑞 游彪 张维 吴镝 杜军 Yuan Yuan;Lu-Jun Wei;Yu Lu;Ruo-Bai Liu;Tian-Yu Liu;Jia-Rui Chen;Biao You;Wei Zhang;Di Wu;Jun Du(National Laboratory of Solid State Microstructures and Department of Physics,Nanjing University,Nanjing 210093,China;New Energy Technology Engineering Laboratory of Jiangsu Provence&School of Science,Nanjing University of Posts and Telecommunications(NUPT),Nanjing 210046,China)

机构地区：[1]National Laboratory of Solid State Microstructures and Department of Physics,Nanjing University,Nanjing 210093,China [2]New Energy Technology Engineering Laboratory of Jiangsu Provence&School of Science,Nanjing University of Posts and Telecommunications(NUPT),Nanjing 210046,China

出　　处：《Chinese Physics B》2023年第6期595-601,共7页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China (Grant No. 2022YFA1403602);the National Natural Science Foundation of China (Grant Nos. 51971109, 52025012, and 52001169)。

摘　　要：Electric-field control of perpendicular magnetic anisotropy(PMA) is a feasible way to manipulate perpendicular magnetization,which is of great importance for realizing energy-efficient spintronics.Here,we propose a novel approach to accomplish this task at room temperature by resistive switching(RS) via electrochemical metallization(ECM) in a device with the stack of Si/SiO_(2)/Ta/Pt/Ag/Mn-doped ZnO(MZO)/Pt/Co/Pt/ITO.By applying certain voltages,the device could be set at high-resistance-state(HRS) and low-resistance-state(LRS),accompanied with a larger and a smaller coercivity(H_(C)),respectively,which demonstrates a nonvolatile E-field control of PMA.Based on our previous studies and the present control experiments,the electric modulation of PMA can be briefly explained as follows.At LRS,the Ag conductive filaments form and pass through the entire MZO layer and finally reach the Pt/Co/Pt sandwich,leading to weakening of PMA and reduction of H_(C).In contrast,at HRS,most of the Ag filaments dissolve and leave away from the Pt/Co/Pt sandwich,causing partial recovery of PMA and an increase of H_(C).This work provides a new clue to designing low-power spintronic devices based on PMA films.

关 键 词：electric-field control resistive switching perpendicular magnetic anisotropy electrochemical metallization magnetoelectric random access memory 

分 类 号：O469[理学—凝聚态物理]