A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors  

作　　者：芦宾 马鑫 王大为 柴国强 董林鹏 苗渊浩 Bin Lu;Xin Ma;Dawei Wang;Guoqiang Chai;Linpeng Dong;Yuanhao Miao(School of Physics and Information Engineering,Shanxi Normal University,Taiyuan 030000,China;Shaanxi Province Key Laboratory of Thin Films Technology&Optical Test,Xi'an Technological University,Xi'an 710032,China;Research and Development Center of Optoelectronic Hybrid IC,Guangdong Greater Bay Area Institute of Integrated Circuit and System,Guangzhou 510535,China)

机构地区：[1]School of Physics and Information Engineering,Shanxi Normal University,Taiyuan 030000,China [2]Shaanxi Province Key Laboratory of Thin Films Technology&Optical Test,Xi'an Technological University,Xi'an 710032,China [3]Research and Development Center of Optoelectronic Hybrid IC,Guangdong Greater Bay Area Institute of Integrated Circuit and System,Guangzhou 510535,China

出　　处：《Chinese Physics B》2023年第6期660-665,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. 62004119 and 62201332);the Applied Basic Research Plan of Shanxi Province, China (Grant Nos. 20210302124647 and 20210302124028)。

摘　　要：Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transistors(TFETs)based on GAA structures also present improved performance.In this paper,a non-quasi-static(NQS) device model is developed for nanowire GAA TFETs.The model can predict the transient current and capacitance varying with operation frequency,which is beyond the ability of the quasi-static(QS) model published before.Excellent agreements between the model results and numerical simulations are obtained.Moreover,the NQS model is derived from the published QS model including the current-voltage(I-V) and capacitance-voltage(C-V) characteristics.Therefore,the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.

关 键 词：tunneling field effect transistor relaxation time approximation non-quasi-static non-quasi-static 

分 类 号：TN386[电子电信—物理电子学]