YAG晶体研磨工艺与研磨后亚表面损伤研究  

YAG Crystal Lapping Process and Subsurface Damage After Lapping

作　　者：马荣国 张庆礼[1,3] 高进云 孙贵花 窦仁勤[1,3] 韩松 张瑞[1,3] 陈照 王小飞 张德明 孙彧 刘文鹏[1,3] MA Rongguo;ZHANG Qingli;GAO Jinyun;SUN Guihua;DOU Renqin;HAN Song;ZHANG Rui;CHEN Zhao;WANG Xiaofei;ZHANG Deming;SUN Yu;LIU Wenpeng(The Key Laboratory of Photonic Devices and Materials of Anhui Province,Anhui Institute of Optics and Fine Mechanics,Hefei Institutes of Physical Science,Chinese Academy of Sciences,Hefei 230031,China;University of Science and Technology of China,Hefei 230026,China;Advanced Laser Technology Laboratory of Anhui Province,Hefei 230037,China)

机构地区：[1]中国科学院合肥物质科学研究院,安徽光学精密机械研究所,安徽省光子器件与材料重点实验室,合肥230031 [2]中国科学技术大学,合肥230026 [3]先进激光技术安徽省实验室,合肥230037

出　　处：《硅酸盐学报》2023年第3期767-774,共8页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(51802307);先进激光技术安徽省实验室开放研究基金项目(AHL20220ZR04,AHL2021KF07);安徽省科技重大专项项目(202203a05020002)。

摘　　要：YAG晶体是一种典型硬脆材料,莫氏硬度达8.5,常温下不溶于任何酸碱,加工难度较大。针对YAG晶体研磨加工,本工作提出一种分步研磨工艺。基于游离磨料研磨的方法,在研磨过程中逐级减小碳化硼(B4C)磨料粒径,选用磨料W40、磨料W28、磨料W14、磨料W7分步骤研磨,4种磨料的粒度范围依次为:40~28μm、28~20μm、14~10μm、7~5μm。通过研磨参数试验研究了每个步骤中研磨压力、研磨盘和摆轴转速、研磨液中B4C质量分数等参数对研磨效果的影响,得出最佳研磨参数;通过截面显微法测量出YAG晶体研磨后亚表面损伤的深度,确定后续抛光去除量,并探究了亚表面损伤深度hSSD与研磨后表面粗糙度Ra的关系。研究表明:当研磨压力为44.54 kPa、研磨盘和摆轴转速为60 r/min、研磨液中B4C质量分数为15%时,每个研磨步骤均取得最好研磨效果:磨料W40、磨料W28、磨料W14、磨料W7研磨的材料去除率分别为83.12、57.32、27.54、9.53μm/min,研磨后表面粗糙度Ra分别为0.763、0.489、0.264、0.142μm。截面显微法测量得出分步研磨后产生的亚表面损伤深度为3.041μm,需要在后续抛光中去除;此研磨参数下YAG晶体研磨后亚表面损伤深度与表面粗糙度的关系为:hSSD=41.46×Ra4/3,该研究可为YAG晶体元件的实际加工生产提供指导。YAG crystal is a typical hard and brittle material with Mohs hardness of 8.5 and insoluble in any acid or base at room temperature,so it is difficult to process.A step-by-step lapping process is proposed in order to explore lapping processing of YAG crystals in this paper.Based on the method of free abrasive lapping,the particle size of boron carbide(B4C)abrasive was reduced step by step during the lapping process,and abrasive W40,abrasive W28,abrasive W14 and abrasive W7 abrasives were selected for lapping in steps,and the particle size ranges of the four abrasive abrasives were:40–28μm,28–20μm,14–10μm,and 7–5μm in order.The effect of the lapping pressure,the rotational speed of the lapping disc and pendulum,and the B4C mass fraction in the lapping solution on the lapping effect in each lapping step was investigated,and the optimal lapping parameters were derived;the depth of subsurface damage after lapping of YAG crystals was measured by cross-section microscopy method to determine the amount of subsequent polishing removal,and the relationship between the depth of subsurface damage hSSDand the surface roughness Raafter lapping was investigated.The study showed that the best lapping results were obtained for each lapping step when the lapping pressure was 44.54 kPa,the rotational speed of the lapping disc and pendulum was 60 r/min,and the B4C mass fraction in the lapping solution was 15%.The material removal rates of abrasive W40,abrasive W28,abrasive W14 and abrasive W7 lapping were 83.12,57.32,27.54 and 9.53μm/min,respectively,and the surface roughness after lapping was 0.763,0.489,0.264,and 0.142μm,respectively.The subsurface damage of the step-by-step lapping was 3.041μm,which were measured by cross-section microscopy method,and needed to be removed by the subsequent polishing;The relationship between subsurface damage depth and surface roughness of YAG crystals after lapping with this lapping parameter is hSSD=41.46×Ra4/3.The study can provide guidance for the actual processing and producti

关 键 词：钇铝石榴石晶体 研磨 亚表面损伤 材料去除率 表面粗糙度 

分 类 号：O786[理学—晶体学] TN305.1[电子电信—物理电子学]