集成DBR反馈区的1.3μm高速直接调制InGaAlAs/InP DFB激光器  

1.3⁃μm High⁃Speed Directly⁃Modulated InGaAlAs/InP DFB Laser with Integrated DBR Feedback Region

作　　者：朱旭愿 剌晓波 郭竟 李振宇 赵玲娟[1,2,3] 王圩 梁松[1,2,3] Zhu Xuyuan;La Xiaobo;Guo Jing;Li Zhenyu;Zhao Lingjuan;Wang Wei;Liang Song(Key Laboratory of Semiconductor Material Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices,Beijing 100083,China)

机构地区：[1]中国科学院半导体研究所半导体材料科学重点实验室,北京100083 [2]中国科学院大学材料与光电研究中心,北京100049 [3]低维半导体材料与器件北京市重点实验室,北京100083

出　　处：《中国激光》2023年第10期27-33,共7页Chinese Journal of Lasers

基　　金：国家重点研发计划(2018YFB2200801)。

摘　　要：研制了以InGaAlAs多量子阱为有源材料的InP基1.3μm波段高速直接调制分布反馈(DFB)激光器,单片集成了与DFB激光器区具有相同量子阱材料的分布式布拉格反射器(DBR)反馈区。室温下DFB有源区长度为200μm时器件的3 dB小信号直接调制带宽大于29 GHz。在速率为25 Gbit/s的非归零(NRZ)码数据调制下,光信号经10 km长的单模光纤传输后获得10-10误码率的功率代价在室温及80℃下均小于1 dB。激光器的有源区长度较大,有利于提高发光效率并且有助于减小电流热效应的不利影响。所研制的高速直接调制激光器是大容量短距光纤通信系统的理想光源,具有广阔的应用前景。Objective High-speed modulated semiconductor lasers are important light sources for high-capacity optical communication systems.Compared with externally modulated lasers,such as electro-absorption modulated distributed feedback(DFB)lasers,directly modulated DFB lasers have several advantages,including a simple structure,low cost,and low power consumption.A higher speed of data transmission of an optical communication system can be obtained using DFB lasers with a higher direct modulation bandwidth in the following ways.First,high-gain active materials such as InGaAlAs/InP multi-quantum wells(MQWs)can be used for the fabrication of lasers.Subsequently,a short laser cavity length can be used to realize a short photon lifetime in the cavity.Because of their important applications,high-speed directly-modulated InGaAlAs/InP MQW DFB lasers have been widely studied.However,to obtain a high modulation bandwidth,the length of the active region for most reported lasers must be less than 150μm.A small active length leads to a high facet loss,and thus,a low optical power output.In addition,a small length results in high resistance,which leads to a strong self-heating effect.In this paper,we report high-speed directly-modulated DFB lasers integrated with a distributed Bragg reflector(DBR)section working at 1.3-μm wavelength.For the cavity length of 200μm,the 3-dB small signal direct modulation bandwidth of the laser is larger than 29 GHz.Methods This device is fabricated via two-step lower pressure metal organic chemical vapor deposition(MOCVD)growth.In the first step,the active layer,a multi-quantum well structure comprising nine 1.2%compressively strained InGaAlAs wells and ten 0.2%tensile-strained InGaAlAs barriers,is grown.The thicknesses of each well and barrier are 4 nm and 10 nm,respectively.A 50-nm-thick InGaAlAs graded index layer and a 50-nm-thick InAlAs laser are grown on both sides of the MQW layer.A 60-nm-thick InGaAsP layer is grown on the upper InAlAs layer for grating fabrication.After a uniform grating is

关 键 词：激光器 半导体激光器 高速直接调制 InGaAlAs/InP量子阱 1.3μm波段 

分 类 号：TN248.4[电子电信—物理电子学]