不同腔体结构对优化等离子灰化效果探究  

Optimum Exploration for Plasma Ashing Effect of Different Chambers Structures

作　　者：刘晓玲 LIU Xiaoling(The 2^(nd) Research Institute of CETC,Taiyuan 030024,China)

机构地区：[1]中国电子科技集团公司第二研究所,山西太原030024

出　　处：《电子工业专用设备》2023年第3期5-9,61,共6页Equipment for Electronic Products Manufacturing

摘　　要：为了提高低压等离子灰化工艺的均匀性指标,通过对不同光刻胶灰化工艺效果进行采集分析,针对圆柱形石英工艺腔进行参数优化,着重分析了腔体结构与灰化效果的关系,分别通过ANSYS软件仿真及实际工艺验证,归纳出工艺腔体结构与灰化工艺片内均匀性之间的关系,得出符合工业生产要求均匀性指标的腔体结构参数。In order to improve the uniformity index of low-pressure plasma ashing process,this paper collects and analyzes the ashing process effects of different photoresists,optimizes the parameters of cylindrical quartz process chambers,focuses on analyzing the relationship between cavity structure and ashing effect,and summarizes the relationship between process chambers' structure and in-chip uniformity of ashing process through ANSYS software simulation and actual process verification The chamber structure parameters that meet the uniformity index of industrial production requirements are obtained.

关 键 词：等离子灰化 灰化速率 灰化均匀性 

分 类 号：TN304.05[电子电信—物理电子学]