合成条件对In_(2)O_(3)纳米线阵列结构及气敏性能的影响  

Effects of Synthesis Conditions on Structure and Gas-Sensing Properties of In_(2)O_(3) Nanowire Arrays

作　　者：杨燕 宫杰 孙浩 王新庆 YANG Yan;GONG Jie;SUN Hao;WANG Xinqing(College of Mechanical and Electrical Engineering,China Jiliang University,Hangzhou 310018,China;College of Modern Science and Technology,China Jiliang University,Hangzhou 310018,China;College of Material Science and Engineering,China Jiliang University,Hangzhou 310018,China)

机构地区：[1]中国计量大学机电工程学院,杭州310018 [2]中国计量大学现代科技学院,杭州310018 [3]中国计量大学材料科学与工程学院,杭州310018

出　　处：《吉林大学学报（理学版）》2023年第4期950-956,共7页Journal of Jilin University:Science Edition

基　　金：国家自然科学基金(批准号:51172220).

摘　　要：用SBA-15硬模板复制技术在不同温度下制备具有纳米线阵列结构的In_(2)O_(3)系列样品.利用X射线衍射仪、场扫描电子显微镜和紫外可见光光度计对样品的晶体结构、晶粒尺寸、晶胞参数、形貌及带隙宽度等进行表征,并测试分析样品对乙醇气体的气敏性能.结果表明:样品均为球形纳米In_(2)O_(3)晶粒有序排列生长组成的三维纳米线阵列结构;随着烧结温度的增加,样品的晶粒尺寸和纳米线直径增大,纳米线间距减小;当烧结温度为450~650℃时,样品的晶胞参数和带隙宽度随烧结温度的增加分别呈增大和减小趋势;当乙醇气体质量浓度为1×10^(-4) mg/L,测试温度为320℃时,450℃烧结In_(2)O_(3)样品的灵敏度最大为50.59.We used SBA-15 hard template replication technology to prepare In_(2)O_(3) series samples with nanowire array structur es at different temperatures.The crystal structure,grain size,unit cell parameters,morphology and band gap width of the samples were characterized by X-ray diffractometer,field scannin g electron microscope and UV-Vis spectrophotometer,and the gas sensitivity of the samples to ethanol gas was tested and analyzed.The results show that the samples are all three-dimensional nanowire array structures formed by the orderly arrangement and growth of spherical nano In_(2)O_(3) grains.With the increase of sintering temperature,the grain size and nanowire diameter of the samples increase,and the nanowire spacing decreases.The unit cell parameters a nd the band gap width of the samples show an increasing and decreasing trend respectively with the increase of sintering temperature in the range of sintering temperature from 450℃to 650℃.When the mass concentration of ethanol gas is 1×10^(-4) mg/L and the test temperature is 320℃,the sensitivi ty of the In_(2)O_(3) sample sintered at 450℃is the maximum of 50.59.

关 键 词：纳米线阵列 模板复制技术 介孔结构 气敏性能 

分 类 号：TB383[一般工业技术—材料科学与工程]