金属氧化物半导体气敏传感器研究进展  

Research progress of metal oxide semiconductor gas sensor

作　　者：杨俊超 潘勇 秦墨林 闫灿灿 黄启斌 Yang Jun-chao;Pan Yong;Qin Mo-lin;Yan Can-can;Huang Qi-bin(Institute of Chemical Defense,Academy of Military Sciences,Beijing 102205,China)

机构地区：[1]军事科学院防化研究院,北京102205

出　　处：《化学传感器》2022年第2期10-18,共9页Chemical Sensors

摘　　要：金属氧化物半导体气敏传感器由于具有低成本、低功耗、高灵敏度、快速响应、稳定耐用等特点而引起人们广泛关注。本文主要介绍了金属氧化物半导体气敏传感器的基本原理、分类、器件结构、气敏机制,重点介绍了金属氧化物气敏传感器性能提升方法。通过掺杂改性、改变微观尺寸和形貌以及形成各种复合结构等都有利于金属氧化物传感器气敏性能的增强,并对其增强机理进行了一定的解释。Metal oxide semiconductor gas sensor has attracted widely spread attention due to its low cost,low power consumption,high sensitivity,fast response,stability and durability.This paper mainly introduces the basic principle,classification,device structure and gas sensing mechanism of metal oxide semiconductor gas sensor,and focuses on the performance improvement method of metal oxide gas sensor.Doping modification,changing microscopic size and morphology and forming various composite structures are conducive to the enhancement of gas sensing performance of metal oxide sensors.At last,the enhancement mechanism is explained.

关 键 词：金属氧化物 半导体气敏 气敏增强 掺杂改性 复合结构 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]