NGD Analysis of Defected Ground and SIW-Matched Structure  

作　　者：GU Taochen WAN Fayu GE Junxiang Lalléchère Sébastien Rahajandraibe Wenceslas Ravelo Blaise 

机构地区：[1]Nanjing University of Information Science&Technology(NUIST),Nanjing 210044,China [2]UniversitéClermont Auvergne(UCA),CNRS,SIGMA Clermont,Institut Pascal,Aubière,France [3]Aix-Marseille University,CNRS,University of Toulon,IM2NP UMR7334,Marseille,France

出　　处：《Chinese Journal of Electronics》2023年第2期343-352,共10页电子学报（英文版）

摘　　要：A bandpass negative group delay(NGD)passive circuit based on defect ground structure(DGS)and substrate integrated waveguide(SIW)-matched is developed in the paper.The NGD DGS topology is originally built with notched cells associated with self-matched substrate waveguide elements.The DGS design method is introduced as a function of the geometrical notched and SIW via elements.Then,parametric analyses based on full wave 3-D electromagnetic S-parameter simulations were considered to investigate the influence of DGS physical size effects.The design method feasibility study is validated with fully distributed microstrip circuit prototype.Significant bandpass NGD function performances were validated with 3-D simulations and measurements with−1.69 ns negative group delay value around 2 GHz center frequency over 33.7 MHz NGD bandwidth.Insertion loss is 4.37 dB,and reflection loss reaches 41.5 dB.

关 键 词：Defected ground structure(DGS) Microwave circuit design method Bandpass negative group delay(BP NGD)function EXPERIMENTATION Microstrip circuit Substrate integrated waveguide(SIW) 

分 类 号：TN03[电子电信—物理电子学] O441[理学—电磁学]