Modeling and Measurement of 3D Solenoid Inductor Based on Through-Silicon Vias  

作　　者：YIN Xiangkun WANG Fengjuan ZHU Zhangming Vasilis F.Pavlidis LIU Xiaoxian LU Qijun LIU Yang YANG Yintang 

机构地区：[1]Shaanxi Key Lab.of Integrated Circuits and Systems,School of Microelectronics,Xidian University,Xi’an 710071,China [2]School of Automation and Information Engineering,Xi’an University of Technique,Xi’an 710048,China [3]Department of Computer Science,University of Manchester,Manchester M139PL,UK

出　　处：《Chinese Journal of Electronics》2023年第2期365-374,共10页电子学报（英文版）

基　　金：supported in part by the Fok Ying Tung Education Foundation(171112);the Fundamental Research Funds for the Central Universities(JB211110,JB191113);National Natural Science Foundation of China(62074121).

摘　　要：Through-silicon via(TSV)provides vertical interconnectivity among the stacked dies in three-dimensional integrated circuits(3D ICs)and is a promising option to minimize 3D solenoid inductors for on-chip radio-frequency applications.In this paper,a rigorous analytical inductance model of 3D solenoid inductor is proposed based on the concept of loop and partial inductance.And a series of 3D samples are fabricated on 12-in high-resistivity silicon wafer using low-cost standard CMOS-compatible process.The results of the proposed model match very well with those obtained by simulation and measurement.With this model,the inductance can be estimated accurately and efficiently over a wide range of inductor windings,TSV height,space,and pitch.

关 键 词：Analytical model Solenoid inductor Passive microwave devices Three-dimensional integrated circuit Through-silicon vias(TSVs) Finite element method(FEM) 

分 类 号：O441.3[理学—电磁学] TN40[理学—物理]