基于C_(14)H_(31)O_(3)P-Ti_(3)C_(2)/Au肖特基结的自驱动近红外探测器  

Self-driven near infrared photoelectric detector based on C_(14)H_(31)O_(3)P-Ti_(3)C_(2)/Au Schottky junction

作　　者：杜立杰 陈靖雯 王荣明 Du Li-Jie;Chen Jing-Wen;Wang Rong-Ming(Beijing Advanced Innovation Center for Materials Genome Engineering,State Key Laboratory for Advanced Metals and Materials,Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science,School of Mathematics and Physics,University of Science and Technology Beijing,Beijing 100083,China)

机构地区：[1]北京科技大学数理学院,磁光电复合材料与界面科学北京市重点实验室,新金属材料国家重点实验室,北京材料基因工程高精尖创新中心,北京100083

出　　处：《物理学报》2023年第13期237-244,共8页Acta Physica Sinica

基　　金：北京市自然科学基金(批准号:2212034);国家自然科学基金(批准号:51971025)资助的课题。

摘　　要：Ti_(3)C_(2)Tx作为新型二维过渡金属碳化物/氮化物(MXene)中的一类,具有丰富的表面官能团(—OH,—F和—O等),并能够通过进一步的表面功能化调控表现出半导体特性.目前将Ti3C2Tx半导体性质应用在红外光电探测器中的研究还很少.本文研制了一种基于C_(14)H_(31)O_(3)P-Ti_(3)C_(2)/Au肖特基结的自驱动近红外光电探测器.通过膦酸基团与Ti3C2Tx表面羟基的缩合反应,制备了改性的C_(14)H_(31)O_(3)P-Ti_(3)C_(2)二维纳米半导体;并采用滴涂法构建了C14H31O3P-Ti3C2/Au肖特基结光电探测器.该器件在近红外波段(808—1342 nm)显示出良好的检测性能和循环稳定性,1064 nm近红外光照射下最高响应度为0.28 A/W,比探测率为4.3×10^(7)Jones,经10次I-t循环后器件性能保持稳定.由于C_(14)H_(31)O_(3)P-Ti_(3)C_(2)/Au肖特基结光电探测器具备自驱动特性和简单的制备工艺,因此在弱光信号检测方面表现出良好的应用潜力,例如在天文学和生物医学领域.这为基于MXene的近红外探测器的设计和研制提供了新思路.Ti3C2Tx,as one of new two-dimensional materials MXene,has abundant surface functional groups(—OH,—F,and—O,etc.)and can exhibit semiconductor properties through further surface functionalization.In addition,it has excellent absorption capabilities for both infrared and visible light.Currently,there is limited research on applying the semiconductor properties of Ti_(3)C_(2)Tx to infrared photodetectors.In this study,a self-driven near-infrared photodetector based on a C_(14)H_(31)O_(3)P-Ti_(3)C_(2)/Au Schottky junction is developed.The modified C_(14)H_(31)O_(3)P-Ti_(3)C_(2)two-dimensional semiconductor is prepared by a simple solution method,in which the phosphonic acid group reacts with the hydroxyl group on the Ti_(3)C_(2)Tx surface.The C_(14)H_(31)O_(3)P-Ti_(3)C_(2)/Au photodetector is constructed by using a drop-coating method at room temperature.The observation of an S-shaped curve in the I-V characteristics indicates the formation of a Schottky junction between C_(14)H_(31)O_(3)P-Ti_(3)C_(2)nanosheets and the Au electrode.The device exhibits good detection performance in the near-infrared band(808–1342 nm),with a maximum responsivity of 0.28 A/W,a detectivity of 4.3×10^(7)Jones and an external quantum efficiency(EQE)of 32.75%under 1064 nm infrared light illumination.The Ion/Ioff ratio is 10.4,which is about 7.3 times higher than that under 1342 nm light.The response time and the recovery time of the device are 0.9 s and 0.5 s,respectively.After 10 cycles of I-t,the photocurrent does not show any significant decay,indicating excellent repeatability and cycle stability of the device.Owing to the built-in electric field formed by the Schottky junction,photo-generated electrons and holes can quickly separate and produce photocurrent in the external circuit without the need for external voltage driving.In addition,the C_(14)H_(31)O_(3)P-Ti_(3)C_(2)film obtained by drop-casting on Au is composed of several layers of nanosheets that are randomly stacked,which can effectively relax the plasma momentum limit

关 键 词：近红外光电探测器 肖特基结 MXene 自驱动 

分 类 号：TN215[电子电信—物理电子学] TB34[一般工业技术—材料科学与工程]