DC/DC变换电路中开关器件损耗计算及仿真  

Calculation and Simulation of Switching Device Loss in DC/DC Converter

作　　者：宋素静 王步根 SONG Sujing;WANG Bugen(Tongda Electromagnetic Energy Co.,Ltd.,Changsha 410006,China;Hunan Xiangtan Electric Power Co.,Ltd.,Xiangtan 411100,China)

机构地区：[1]通达电磁能股份有限公司,湖南长沙410006 [2]湖南湘电动力股份有限公司,湖南湘潭411100

出　　处：《电工技术》2023年第11期1-3,共3页Electric Engineering

摘　　要：根据开关器件的物理模型,分析并计算了开关器件在DC/DC变换电路中的功率损耗。针对工程应用中开关器件损耗计算的实时性和精确性要求,利用功率开关器件手册提供的产品参数,分别计算了逆变部分的SiC MOSFET模块和整流部分的整流二极管的器件损耗。将计算值与PLECS仿真结果进行对比,结果表明该计算方法可得到较为准确的计算损耗,进一步提高了工程应用中损耗计算的准确性。According to the physical model of the switching device,the power loss of the switching device in the DC/DC converter circuit is analyzed and calculated.In order to meet the requirements of real-time and accuracy in the calculation of switching device losses in the engineering applications,the device losses of SiC MOSFET and rectifier diode in the inverter part and rectifier part are calculated respectively by using the product parameters provided in the power switch device manual.Compared with the simulation results of PLECS,the results show that this method can obtain more accurate loss calculation,and further improve the accuracy of loss calculation in engineering application.

关 键 词：DC/DC变换 损耗 碳化硅MOSFET 仿真 

分 类 号：TN712[电子电信—电路与系统]