惠普忆阻电路的线性叠加分析  

Linear Superposition Analysis of HP Memristor Circuits

作　　者：丁芝侠 黄莎莉 李赛 杨乐 DING Zhixia;HUANG Shali;LI Sai;YANG Le(School of Electrical and Information Engineering,Wuhan Institute of Technology,Wuhan 430205,China)

机构地区：[1]武汉工程大学电气信息学院,武汉430205

出　　处：《电子与信息学报》2023年第7期2659-2666,共8页Journal of Electronics & Information Technology

基　　金：国家自然科学基金(62176189,62106181)。

摘　　要：基于惠普(HP)忆阻器的元件特性,该文分析了惠普忆阻器的数学关系式,惠普忆阻元件的内部状态变量与忆阻阻值之间存在增量线性关系,在外加电压下惠普忆阻器阻值的变化可叠加,得出了惠普忆阻电路具有线性叠加性的结论。通过PSpice电路仿真验证上述结论的有效性和正确性,为叠加定理在含惠普忆阻器及线性元件的线性电路中的使用提供了理论分析支撑。Based on the component characteristics of Hewlett Packard(HP)memristor,the mathematical relationship formula of HP memristor is analyzed.There is an incremental linear relationship between the internal state variables of HP memristor components and the value of memristor.The change of the value of HP memristor can be superimposed under applied voltage,and the conclusion is drawn that HP memristor circuit has linear superposition.The validity and correctness of the above conclusions are verified by PSpice circuit simulation,which provides theoretical analysis support for the use of the superposition theorem in linear circuits containing HP memristors and linear components.

关 键 词：惠普忆阻电路 惠普忆阻器 增量线性 叠加定理 PSPICE仿真 

分 类 号：TN601[电子电信—电路与系统]