Chemical vapor deposition for few‐layer two‐dimensional materials  

作　　者：Qing Zhang Dechao Geng Wenping Hu 

机构地区：[1]Joint School of National University of Singapore and Tianjin University,International Campus of Tianjin University,Fuzhou,China [2]Department of Chemistry,National University of Singapore,Singapore,Singapore [3]Tianjin Key Laboratory of Molecular Optoelectronic Sciences,Department of Chemistry,School of Science,Tianjin University,Tianjin,China

出　　处：《SmartMat》2023年第3期1-4,共4页智能材料（英文）

基　　金：National Natural Science Foundation of China,Grant/Award Number:52002267;National Key R&D Program of China,Grant/Award Number:2021YFA0717900。

摘　　要：Chemical vapor deposition(CVD)approach offers a controllable strategy for preparing large‐area and high‐quality few‐layer(mainly bilayer or trilayer)twisted or untwisted two‐dimensional(2D)materials,and is predicted to boost the development of 2D materials from laboratory research to industrial applications.

关 键 词：BILAYER chemical vapor deposition TRILAYER two‐dimensional materials 

分 类 号：TB34[一般工业技术—材料科学与工程]