2.83-kV double-layered NiO/β-Ga_(2)O_(3) vertical p-n heterojunction diode with a power figure-of-merit of 5.98 GW/cm^(2)  

作　　者：Tingting Han Yuangang Wang Yuanjie Lv Shaobo Dun Hongyu Liu Aimin Bu Zhihong Feng 

机构地区：[1]National Key Laboratory of Application Specific Integrated Circuit(ASIC),Hebei Semiconductor Research Institute,Shijiazhuang 050051,China

出　　处：《Journal of Semiconductors》2023年第7期28-31,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China under Grant U21A20503.

摘　　要：This work demonstrates high-performance NiO/β-Ga_(2)O_(3) vertical heterojunction diodes(HJDs)with double-layer junc-tion termination extension(DL-JTE)consisting of two p-typed NiO layers with varied lengths.The bottom 60-nm p-NiO layer fully covers theβ-Ga_(2)O_(3) wafer,while the geometry of the upper 60-nm p-NiO layer is 10μm larger than the square anode elec-trode.Compared with a single-layer JTE,the electric field concentration is inhibited by double-layer JTE structure effectively,resulting in the breakdown voltage being improved from 2020 to 2830 V.Moreover,double p-typed NiO layers allow more holes into the Ga_(2)O_(3) drift layer to reduce drift resistance.The specific on-resistance is reduced from 1.93 to 1.34 mΩ·cm^(2).The device with DL-JTE shows a power figure-of-merit(PFOM)of 5.98 GW/cm^(2),which is 2.8 times larger than that of the conven-tional single-layer JTE structure.These results indicate that the double-layer JTE structure provides a viable way of fabricating high-performance Ga_(2)O_(3) HJDs.

关 键 词：β-Ga_(2)O_(3) breakdown voltage heterojunction diode(HJD) junction termination extension(JTE) power figure-of-merit(PFOM) 

分 类 号：TN32[电子电信—物理电子学]