Experimental investigation on the instability for NiO/β-Ga_(2)O_(3) heterojunction-gate FETs under negative bias stress  

作　　者：Zhuolin Jiang Xiangnan Li Xuanze Zhou Yuxi Wei Jie Wei Guangwei Xu Shibing Long Xiaorong Luo 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China [2]School of Microelectronics,University of Science and Technology of China,Hefei 230026,China

出　　处：《Journal of Semiconductors》2023年第7期32-36,共5页半导体学报（英文版）

基　　金：supported by the Fundamental Strengthening Program Key Basic Research Project(Grant No.2021-173ZD-057).

摘　　要：A NiO/β-Ga_(2)O_(3) heterojunction-gate field effect transistor(HJ-FET)is fabricated and it_(s)instability mechanisms are exper-imentally investigated under different gate stress voltage(V_(G,s))and stress times(t_(s)).Two different degradation mechanisms of the devices under negative bias stress(NBS)are identified.At low V_(G,s)for a short t_(s),NiO bulk traps trapping/de-trapping elec-trons are responsible for decrease/recovery of the leakage current,respectively.At higher V_(G,s)or long t_(s),the device transfer char-acteristic curves and threshold voltage(V_(TH))are almost permanently negatively shifted.This is because the interface dipoles are almost permanently ionized and neutralize the ionized charges in the space charge region(SCR)across the heterojunction inter-face,resulting in a narrowing SCR.This provides an important theoretical guide to study the reliability of NiO/β-Ga_(2)O_(3) hetero-junction devices in power electronic applications.

关 键 词：NiO/β-Ga_(2)O_(3)heterojunction FET NBS INSTABILITY bulk traps interface dipoles 

分 类 号：TN386[电子电信—物理电子学] TB34[一般工业技术—材料科学与工程]