Iodine-assisted ultrafast growth of high-quality monolayer MoS_(2) with sulfur-terminated edges  

作　　者：Qinke Wu Jialiang Zhang Lei Tang Usman Khan Huiyu Nong Shilong Zhao Yujie Sun Rongxu Zheng Rongjie Zhang Jingwei Wang Junyang Tan Qiangmin Yu Liqiong He Shisheng Li Xiaolong Zou Hui-Ming Cheng Bilu Liu 

机构地区：[1]Shenzhen Geim Graphene Center,Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School,Tsinghua University,Shenzhen 518055,China [2]Institute of Functional Porous Materials,School of Materials Science and Engineering,Zhejiang Sci-Tech University,Hangzhou 310018,China [3]International Center for Materials Nanoarchitectonics,National Institute for Materials Science,Tsukuba 305-0044,Japan [4]Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality,Shenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,China [5]Shenyang National Laboratory for Materials Sciences,Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China [6]Advanced Technology Institute,University of Surrey,Guildford,Surrey GU27XH,UK

出　　处：《National Science Open》2023年第4期43-54,共12页国家科学进展（英文）

基　　金：This work was supported by the National Key R&D Program(2018YFA0307300);the National Natural Science Foundation of China(51991343,51991340,52188101 and 51920105002);the China Postdoctoral Science Foundation(2021M701948);the National Science Fund for Distinguished Young Scholars(52125309);Guangdong Innovative and Entrepreneurial Research Team Program(2017ZT07C341);Shenzhen Basic Research Project(JCYJ20200109144616617 and JCYJ20220818101014029).

摘　　要：Two-dimensional(2D)semiconductors have attracted great attention to extend Moore’s law,which motivates the quest for fast growth of high-quality materials.However,taking MoS_(2) as an example,current methods yield 2D MoS_(2) with a low growth rate and poor quality with vacancy concentrations three to five orders of magnitude higher than silicon and other commercial semiconductors.Here,we develop a strategy of using an intermediate product of iodine as a transport agent to carry metal precursors efficiently for ultrafast growth of high-quality MoS_(2).The grown MoS_(2) has the lowest density of sulfur vacancies(~1.41×10^(12) cm^(−2))reported so far and excellent electrical properties with high on/off current ratios of 108 and carrier mobility of 175 cm^(2) V^(−1) s^(−1).Theoretical calculations show that by incorporating iodine,the nucleation barrier of MoS_(2) growth with sulfur-terminated edges reduces dramatically.The sufficient supply of precursor and low nucleation energy together boost the ultrafast growth of sub-millimeter MoS_(2) domains within seconds.This work provides an effective method for the ultrafast growth of 2D semiconductors with high quality,which will promote their applications.

关 键 词：2D semiconductors molybdenum disulfides ultrafast growth defect density sulfur vacancy iodine-assisted sulfur-terminated edge 

分 类 号：TQ136.12[化学工程—无机化工]