Sub-1-nm-node beyond-silicon materials and devices: Pathways, opportunities and challenges  

作　　者：Yue Zhang 

机构地区：[1]Academy for Advanced Interdisciplinary Science and Technology,Beijing Advanced Innovation Center for Materials Genome Engineering,University of Science and Technology Beijing,Beijing 100083,China [2]Beijing Key Laboratory for Advanced Energy Materials and Technologies,School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China

出　　处：《National Science Open》2023年第4期168-169,共2页国家科学进展（英文）

摘　　要：With the increasing demand for processing massive amounts of data and information in the post-Moore era,higher demands are being placed on the performance of integrated circuits(ICs).Miniaturizing the size of transistors and increasing their integration has been the main driver for the development of ICs in recent decades.However,the development of traditional silicon-based ICs has reached a bottleneck due to the limits of the miniaturization of silicon-based materials.

关 键 词：BEYOND materials MASSIVE 

分 类 号：TN40[电子电信—微电子学与固体电子学] TB383.1[一般工业技术—材料科学与工程]