GaN基高功率微波器件高效场路协同分析方法  

Efficient field-circuit co-simulation method for GaN-based high power microwave devices

作　　者：张天成 陈迪娜 李春雨 张利民 徐祖银 成爱强 包华广 丁大志[1] Zhang Tian-Cheng;Chen Di-Na;Li Chun-Yu;Zhang Li-Min;Xu Zu-Yin;Cheng Ai-Qiang;Bao Hua-Guang;Ding Da-Zhi(School of Microelectronics(School of Integrated Circuits),Nanjing University of Science and Technology,Nanjing 210094,China;Nanjing Electronic Devices Institute,Nanjing 210094,China)

机构地区：[1]南京理工大学微电子学院(集成电路学院),南京210094 [2]南京电子器件研究所,南京210094

出　　处：《物理学报》2023年第14期185-196,共12页Acta Physica Sinica

基　　金：国家重点研发计划(批准号:2022YFF0707800,2022YFF0707802);国家自然科学基金(批准号:62201257,62025109,62001231);江苏省重点研发计划产业前瞻与关键核心技术(批准号:BE2022070,BE2022070-1);江苏省卓越博士后计划资助的课题。

摘　　要：以氮化镓(GaN)为代表的第三代半导体正促使着固态微波功率器件向着更高功率、更高效率、集成化的方向不断发展,但这会导致器件内部电磁场分布效应更为显著,单一的路仿真已无法满足分析设计的精度需求,亟需建立有源GaN器件与无源电磁结构的一体化协同仿真技术.针对这一需求,本文提出基于时域不连续伽辽金技术的GaN基高功率微波器件高效场路协同仿真方法,将所提取的GaN HEMT(high electron mobility transistor)器件大信号紧凑模型引入电磁场方程中,采用局部时间步进技术以消除非线性紧凑模型及多尺度网格对全局算法稳定性条件的限制,实现有源器件-无源电磁结构、多尺度粗细网格的高效自适应求解.通过数值仿真算例与实验测试及软件计算结果对比展示了本文所提方法准确性和高效性,可为先进大功率微波器件的高可靠研发提供理论基础与设计参考.Due to the development of the third-generation semiconductors representative of gallium nitride(GaN),the microwave power devices are developing towards higher power,higher efficiency and high integration.However,the electromagnetic field effects are more significant inside the device.As a result,circuit-level based simulation techniques can no longer satisfy the accuracy requirements of device design.Therefore it is necessary to urgently establish the field-circuit co-simulation techniques to couple the active GaN devices with passive electromagnetic structures.In this work,we propose a high-precision discontinuous Galerkin time-domain method to analyze the performances of GAN-based high-power microwave devices.The extracted large-signal compact model of the GaN HEMT is incorporated into the electromagnetic field equations.A local timestepping technique is adopted to remove the constraints of nonlinear compact models and multiscale elements on the stability conditions of the global algorithm.The comparisons among numerical simulations,experimental results,and software calculations demonstrate the excellent accuracy and efficiency of the proposed method,which can provide a theoretical analysis and design tool for the high reliability design of advanced high-power microwave devices.

关 键 词：GaN功率器件 大信号等效拓扑模型 场路协同仿真技术 时域不连续伽辽金方法 

分 类 号：TN386[电子电信—物理电子学]