基于大电流通态压降法的SiC MOSFET模块结温标定方法研究  

Research on junction temperature calibration method of SiC MOSFET module based on on-state voltage under high current method

作　　者：李玉生 曹瀚 李锐[2] 吴浩伟[2] 陈涛[2] 彭年 Li Yusheng;Cao Han;Li Rui;Wu Haowei;Chen Tao;Peng Nian(Navy Equipment Bureau at Guangzhou,Guangzhou 510310,China;Wuhan Second Ship Design and Research Institute,Wuhan 430205,China)

机构地区：[1]海装广州局,广州510310 [2]武汉第二船舶设计研究所,武汉430205

出　　处：《船电技术》2023年第7期83-88,共6页Marine Electric & Electronic Engineering

摘　　要：本文提出了一种应用在大电流通态压降法测量SiC MOSFET模块结温中的低自热标定方法。针对标定过程中的模块电压漂移现象,采用SiC MOSFET模块热-电耦合模型对其温升过程进行仿真并找出导致电压漂移的诱因。为了降低标定短脉冲下的通态压降不稳定和自发热导致的SiC MOSFET模块电压漂移现象,根据热-电耦合模型的仿真结果设计了一种低自热标定方法,并设计实验进行验证。相比于传统的单脉冲标定方法,本文所提出的低自热标定方法自发热最大下降34%,模块自发热导致的结温监测误差由最初的26.9℃降低为7.6℃。In this paper,a low self-heating calibration method for SiC MOSFET junction temperature monitoring based on on-state voltage under high current method.To handle the voltage drift during calibration process,the electro-thermal model of SiC MOSFET moduleis used to simulate the temperature rising processand find out the inducements which lead to the voltage drift.In order to reduce the voltage drift phenomenon of SiC MOSFET caused by instability of on-state voltage and self-heating under short calibration pulses,a low self-heating calibration method is designed according to the simulation results of electro-thermal model and is verified by experimental results.Compared with the traditional single-pulse calibration method,the self-heating temperature rise decreases 34%at most and the junction temperature monitoring error caused by the module self=heating is reduced from 26.9℃to 7.6℃.

关 键 词：SiC MOSFET 结温监测 电压漂移 低自热标定方法 

分 类 号：TN386[电子电信—物理电子学]