Step-edge controlled fast growth of wafer-scale MoSe_(2)films by MOCVD  

作　　者：Rui Ji Jing Liao Lintao Li Rongji Wen Mengjie Liu Yifeng Ren Jianghua Wu Yunrui Song Minru Qi Zhixing Qiao Liwei Liu Chengbing Qin Yu Deng Yongtao Tian Suotang Jia Yufeng Hao 

机构地区：[1]Key Laboratory of Material Physics of Ministry of Education,School of Physics and Microelectronics,Zhengzhou University,Zhengzhou 450052,China [2]National Laboratory of Solid State Microstructures,College of Engineering and Applied Sciences,Jiangsu Key Laboratory of Artificial Functional Materials,and Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210023,China [3]State Key Laboratory of Quantum Optics and Quantum Optics Devices,Institute of Laser Spectroscopy,Shanxi University,Taiyuan 030006,China [4]Collaborative Innovation Center of Extreme Optics,Shanxi University,Taiyuan 030006,China [5]College of Medical Imaging,Shanxi Medical University,Taiyuan 030001,China [6]MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices,School of Integrated Circuits and Electronics,Beijing Institute of Technology,Beijing 100081,China

出　　处：《Nano Research》2023年第7期9577-9583,共7页纳米研究（英文版）

基　　金：This work was supported by the National Key Research and Development Project(Nos.2018YFA0305800,2019YFB2205402,and 2022YFA1404201);the National Natural Science Foundation of China(Nos.51772145,62222509,and U22A2091);the Technology Innovation Fund of Nanjing University。

摘　　要：Two-dimensional(2D)transition metal dichalcogenides(TMDCs),due to their unique physical properties,have a wide range of applications in the next generation of electronics,optoelectronics,and valleytronics.Large-scale preparation of high-quality TMDCs films is critical to realize these potential applications.Here we report a study on metal-organic chemical vapor deposition(MOCVD)growth of wafer-scale MoSe_(2)films guided by the crystalline step edges of miscut sapphire wafers.We established that the nucleation density and growth rate of MoSe_(2)films were positively correlated with the step-edge density and negatively with the growth temperature.At a certain temperature,the MoSe_(2)domains on the substrate with high step-edge density grow faster than that with low density.As a result,wafer-scale and continuous MoSe_(2)films can be formed in a short duration(30 min).The MoSe_(2)films are of high crystalline quality,as confirmed by systematic Raman and photoluminescence(PL)measurements.The results provide an important methodology for the rapid growth of wafer-scale TMDCs,which may promote the application of 2D semiconductors.

关 键 词：MoSe_(2) nucleation density transition metal dichalcogenides metal-organic chemical vapor deposition(MOCVD) waferscale two-dimensional(2D)semiconductor 

分 类 号：TB383[一般工业技术—材料科学与工程]