Resistive switching and artificial synaptic performances of memristor based on low-dimensional bismuth halide perovskites  

作　　者：Feifei Luo Yanzhao Wu Junwei Tong Fubo Tian Xianmin Zhang 

机构地区：[1]Key Laboratory for Anisotropy and Texture of Materials(Ministry of Education),School of Materials Science and Engineering,Northeastern University,Shenyang 110819,China [2]Department of Physics,Freie Universität Berlin,14195 Berlin,Germany [3]State Key Laboratory of Superhard Materials,College of Physics,Jilin University,Changchun 130012,China

出　　处：《Nano Research》2023年第7期10108-10119,共12页纳米研究（英文版）

基　　金：This work was supported by the National Natural Science Foundation of China(Nos.52271238 and 51971057);the Liaoning Revitalization Talents Program(No.XLYC2002075);the Research Funds for the Central University(Nos.N2202004 and N2102012).

摘　　要：Zero-dimensional(0D)-Cs_(3)Bi_(2)I_(9),two-dimensional(2D)-Cs_(3)Bi_(2)Br_(9),and one-dimensional(1D)-Cs3Bi2Cl9 perovskite films have been successfully grown on indium tin oxide(ITO)glass substrates,which were used to fabricate memristors with the structure of Al/Cs_(3)Bi_(2)X_(9)(X=I,Br,and Cl)/ITO glass.The current three types of memristors exhibited bipolar resistive switching behaviors.Both the endurance and retention time tests clearly demonstrated the excellent stability of present devices.Especially,the ON/OFF ratio of the 0D-Cs_(3)Bi_(2)I_(9)device is close to 104 at the reading voltage of 0.1 V,which is nearly 100 and 1000 times larger than those of the 1D-Cs3Bi2Cl9 device and the 2D-Cs_(3)Bi_(2)Br_(9)device,respectively.The activation energy of halide vacancies in the Cs_(3)Bi_(2)X_(9)(X=I,Br,and Cl)films was calculated using the density functional theory by considering a minimum migration path,demonstrating the dimensionality of the Cs_(3)Bi_(2)X_(9)(X=I,Br,and Cl)film affected the formation and rupture of conductive filaments.Moreover,the short-term plasticity and long-term plasticity of biological synapse were simulated by evaluating the conductance responses of Al/Cs_(3)Bi_(2)X_(9)(X=I,Br,and Cl)/ITO devices under various voltage pulses in detail.The duration time of long-term plasticity in all the present devices can last for up to 250 s.The 0D-Cs_(3)Bi_(2)I_(9)device showed both the highest spikeduration-dependent plasticity and paired-pulse facilitation indexes compared to the other two devices.Additionally,the 0DCs_(3)Bi_(2)I_(9)device successfully established the associative learning behavior by simulating the Pavlov’s dog experiment.

关 键 词：perovskite films low-dimension resistive switching artificial synapse 

分 类 号：TB383[一般工业技术—材料科学与工程]