Interlayer sensitized van der Waals heterojunction photodetector with enhanced performance  

作　　者：Huide Wang Yonghong Zeng FanXu Meng Rui Cao Yi Liu Zhinan Guo Tingting Wang Haiguo Hu Sidi Fan Yatao Yang SWageh Omar AAl-Hartomy Abul Kalam Yonghong Shao Yu-Jia Zeng Dianyuan Fan Han Zhang 

机构地区：[1]International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology,Institute of Microscale Optoelectronics,Interdisciplinary Center of High Magnetic Field Physics of Shenzhen University,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China [2]Guangzhou Key Laboratory of Sensing Materials and Devices,Center for Advanced Analytical Science,School of Chemistry and Chemical Engineering,Guangzhou University,Guangzhou 510006,China [3]Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province,College of Physics and Optoelectronic Engineering,Shenzhen University,Shenzhen 518060,China [4]College of Electronics and Information Engineering,Shenzhen University,Shenzhen 518060,China [5]Center of Characterization and Analysis,Jilin Institute of Chemical Technology,Jilin 132022,China [6]School of Mathematical&Physical Sciences,Wuhan Textile University,Wuhan 430200,China [7]Department of Physics,Faculty of Science,King Abdulaziz University,Jeddah 21589,Saudi Arabia [8]Research Center for Advanced Materials Science(RCAMS),King Khalid University,P.O.Box 9004,Abha 61413,Saudi Arabia [9]Department of Chemistry,College of Science,King Khalid University,P.O.Box 9004,Abha 61413,Saudi Arabia

出　　处：《Nano Research》2023年第7期10537-10544,共8页纳米研究（英文版）

基　　金：This work was supported by National Key Research and Development Project(No.2019YFB2203503);the National Natural Science Foundation of China(No.62105211);China Postdoctoral Science Foundation(Nos.2021M702242 and 2022T150431);Natural Science Foundation of Guangdong Province(Nos.2018B030306038 and 2020A1515110373);Guangdong Basic and Applied Basic Research Foundation(No.2022A1515010649);Science and Technology Projects in Guangzhou(No.202201000002);Science and Technology Innovation Commission of Shenzhen(Nos.JCYJ20180507182047316,20200805132016001,and JCYJ20200109105608771);Natural Science Foundation of Jilin Province(No.YDZJ202201ZYTS429);NTUT-SZU Joint Research Program(No.2021008);Authors acknowledge support and funding of King Khalid University through Research Center for Advanced Materials Science(RCAMS)(No.RCAMS/KKU/0010/21);The authors also acknowledge the Photonics Center of Shenzhen University for technical support.

摘　　要：Although photodetection based on two-dimensional(2D)van der Waals(vdWs)P-N heterojunction has attracted extensive attention recently,their low responsivity(R)due to the lack of carrier gain mechanism in reverse bias or zero bias operation hinders their applications in advanced photodetection area.Here,a black phosphorus/rhodamine 6G/molybdenum disulfide(BP/R6G/MoS_(2))photodiode with high responsivity at reverse bias or zero bias has been achieved by using interfacial charge transfer of R6G molecules assembled between heterojunction layers.The formed vdWs interface achieves high performance photoresponse by efficiently separating the additional photogenerated electrons and holes generated by R6G molecules.The devices sensitized by the dye molecule R6G exhibit enhanced photodetection performance without sacrificing the photoresponse speed.Among them,the R increased by 14.8-20.4 times,and the specific detectivity(D^(*))increased by 24.9-34.4 times.The strategy based on interlayer assembly of dye molecules proposed here may pave a new way for realizing high-performance photodetection based on 2D vdWs heterojunctions with high responsivity and fast response speed.

关 键 词：HETEROJUNCTION PHOTODETECTOR interlayer sensitization charge transfer RESPONSIVITY 

分 类 号：TN36[电子电信—物理电子学]