Investigation of Antimony ions doping on crystal structure and enhanced microwave dielectric performance of MgTa_(2)O_(6)ceramics  

作　　者：Liang Shi Kui Liu Cheng Liu Dainan Zhang Huaiwu Zhang 

机构地区：[1]School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu,610054,China [2]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu,610054,China

出　　处：《Journal of Materiomics》2023年第4期701-708,共8页无机材料学学报（英文）

基　　金：National Key Scientific Instrument and Equipment Development Project(No.51827802);National Natural Science Foundation of China(No.51902042).

摘　　要：Dielectric ceramics are promising in large-scale commercial millimeter-wave communication technology,such as 5G and the upcoming 6G,thanks to their excellent frequency selection characteristics and environmental stability.In this work,various contents of SbeO bonds were introduced into the MgTa_(2)O_(6)lattice using the solid-phase reaction method to investigate the effects on the lattice and microwave dielectric properties.XRD confirms that Sb ions successfully occupy Ta sites in the lattice and cause lattice shrinkage and crystallinity deterioration,which leads to a slight decrease in the quality factor.Furthermore,DFT calculations reveal that the doping leads to electron-biased aggregation toward O atoms,causing higher SbeO ionicity,but also attenuates the degree of ionization of Ta and Mg ions,which makes the dielectric constant of the doped samples vary non-monotonically with gradient doping.Satisfactorily,Sb doping substantially enhanced the thermal stability of the ceramics,with TCF values reduced from 36×10^(-6)℃^(-1)to 15×10^(-6)℃^(-1).

关 键 词：MgTa_(2)O_(6)ceramics Dielectric RAMAN DFT calculation 

分 类 号：TQ174.1[化学工程—陶瓷工业]