一种高电源抑制比低温漂带隙基准电压源设计  

Design of a Low Temperature Drift Bandgap Reference VoltageSource with High Power Supply Rejection Ratio

作　　者：钱星 蒋品群[1,2] 宋树祥 岑明灿[1,2] 蔡超波 QIAN Xing;JIANG Pinqun;SONG Shuxiang;CEN Mingcan;CAI Chaobo(School of Electronic and Information Engineering/School of Integrated Circuits,Guangxi Normal University,Guilin 541004,China;Key Laboratory of Integrated Circuits and Microsystems(Guangxi Normal University),Education Department of GuangxiZhuang Autonomous Region,Guilin 541004,China)

机构地区：[1]广西师范大学电子与信息工程学院/集成电路学院,广西桂林541004 [2]广西高校集成电路与微系统重点实验室,广西桂林541004

出　　处：《无线电工程》2023年第8期1910-1916,共7页Radio Engineering

基　　金：国家自然科学基金(62061005);广西自然科学基金(2022GXNSFBA035646);广西创新驱动发展专项(AA19254001)。

摘　　要：针对传统带隙基准电压源温度系数大、电源抑制比低等问题,设计了一种低温漂高电源抑制比的带隙基准电压源。将具有二阶温度项的亚阈值状态NMOS管漏电流转化为电压,以消除输出支路三极管的二阶温度项,实现二阶温度补偿;增加了一个前置的新型预稳压电路,以提高基准源的电源抑制能力。SMIC 180 nm CMOS工艺下的后仿真结果表明,当供电电压为3.3 V时,在-40~140℃,温度系数为3.05×10-6/℃;在低于1 kHz的频率范围内,电源电压抑制比(PSRR)为-105 dB,整体静态电流仅为32μA。A bandgap reference voltage source with low-temperature drift and high power supply rejection ratio is designed for the problems of large temperature coefficients and low power supply rejection ratio of traditional bandgap reference voltage source.Firstly,Second-order temperature compensation is achieved by converting the subthreshold state leakage current of NMOS tubes with second-order temperature terms into voltage to eliminate the second-order temperature terms of the output branch triode.Secondly,a new type of pre-stabilized voltage circuit is added to improve the power supply rejection ability of the BGR.Simulation results using SMIC 180 nm CMOS technology show that the temperature coefficient is 3.05×10-6/℃at 3.3 V supply voltage when the temperature range is-40~140℃.The Power Supply Rejection Ratio(PSRR)is-105 dB within 1 kHz and the overall static current is only 32μA.

关 键 词：带隙基准电压源 预稳压 亚阈值曲率补偿 高电源抑制比 低温漂 

分 类 号：TN432[电子电信—微电子学与固体电子学]