菊花链互连电迁移多物理场模拟仿真  

Multi-physical Field Simulation of Electromigration of Daisy-chain Interconnect

作　　者：李雪茹 侯文[1,2] 王俊强 张海坤 李孟委[2] LI Xueru;HOU Wen;WANG Junqing;ZHANG Haikun;LI Mengwei(School of Information and Communication Engineering,North University of China,Taiyuan 030051;Academy for Advanced Interdisciplinary Research,North University of China,Taiyuan 030051)

机构地区：[1]中北大学信息与通信工程学院,太原030051 [2]中北大学前沿交叉科学研究院,太原030051

出　　处：《舰船电子工程》2023年第4期78-81,共4页Ship Electronic Engineering

基　　金：国防173计划技术领域基金项目(编号:2021JCJQJJ0172);高密度三维集成低温Cu-Sn固态扩散键合技术基础研究项目(编号:61804137)资助。

摘　　要：菊花链结构键合凸点在三维封装领域具有广泛应用前景,其电迁移失效现象成为电子封装领域重点关注的问题。建立了球形及方形凸点互连模型,在电-热耦合场作用下,观察互连结构的电流密度分布及温度分布。发现在铝布线进出凸点的位置容易发生电流聚集现象,此处方形凸点电流密度较球形凸点低;方形凸点温度变化幅度较球形凸点低。此外,仿真分析了1mA~3mA输入电流及不同凸点尺寸对电迁移失效的影响。发现相同条件下,大尺寸方形凸点的电迁移可靠性高,为凸点结构设计提供了依据。Daisy-chain bonding bumps are widely used in 3D packaging,and their electromigration failure has become an im⁃portant problem in the field of electronic packaging.The interconnection models of spherical and square bumps are established.The current density distribution and temperature distribution of the interconnect structures are observed under the effect of electric-ther⁃mal coupling field.It is found that current aggregation is easy to happen in the joint of bumps and aluminum wiring.The current den⁃sity of the square bumps is lower than that of the spherical bumps.The temperature variation extent of square bumps is lower than that of spherical bumps.In addition,the effects of 1mA~3mA input current and different bump size on electromigration failure are simulated and analyzed.It is found that under the same conditions,the reliability of electromigration of large square bumps is high,which provides a basis for the design of bump structure.

关 键 词：菊花链互连 电-热耦合 电迁移可靠性 有限元分析 

分 类 号：TN403[电子电信—微电子学与固体电子学]